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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
1N4935G A0G

1N4935G A0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

3,086 0.00

RFQ

1N4935G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.2 V @ 1 A
SF63G A0G

SF63G A0G

DIODE GEN PURP 150V 6A DO201AD

Taiwan Semiconductor Corporation

3,463 0.00

RFQ

SF63G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 6A -55°C ~ 150°C 975 mV @ 6 A
HERAF1601G C0G

HERAF1601G C0G

DIODE GEN PURP 50V 16A ITO220AC

Taiwan Semiconductor Corporation

3,440 0.00

RFQ

HERAF1601G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz 50 ns 10 µA @ 50 V 50 V 16A -55°C ~ 150°C 1 V @ 16 A
MBRF10150 C0G

MBRF10150 C0G

DIODE SCHOTTKY 150V 10A ITO220AC

Taiwan Semiconductor Corporation

2,811 0.00

RFQ

MBRF10150 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 100 µA @ 150 V 150 V 10A -55°C ~ 150°C 1.05 V @ 10 A
1N4935GHA0G

1N4935GHA0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

3,733 0.00

RFQ

1N4935GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.2 V @ 1 A
SF63GHA0G

SF63GHA0G

DIODE GEN PURP 150V 6A DO201AD

Taiwan Semiconductor Corporation

3,150 0.00

RFQ

SF63GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 6A -55°C ~ 150°C 975 mV @ 6 A
HERAF1602G C0G

HERAF1602G C0G

DIODE GEN PURP 100V 16A ITO220AC

Taiwan Semiconductor Corporation

3,839 0.00

RFQ

HERAF1602G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 16A -55°C ~ 150°C 1 V @ 16 A
MBRF10150HC0G

MBRF10150HC0G

DIODE SCHOTTKY 150V 10A ITO220AC

Taiwan Semiconductor Corporation

3,745 0.00

RFQ

MBRF10150HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 10A -55°C ~ 150°C 1.05 V @ 10 A
1N4936G A0G

1N4936G A0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

3,208 0.00

RFQ

1N4936G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.2 V @ 1 A
SF64GHA0G

SF64GHA0G

DIODE GEN PURP 200V 6A DO201AD

Taiwan Semiconductor Corporation

3,562 0.00

RFQ

SF64GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 6A -55°C ~ 150°C 975 mV @ 6 A
HERAF1603G C0G

HERAF1603G C0G

DIODE GEN PURP 200V 16A ITO220AC

Taiwan Semiconductor Corporation

2,625 0.00

RFQ

HERAF1603G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 16A -55°C ~ 150°C 1 V @ 16 A
MBRF10200HC0G

MBRF10200HC0G

DIODE SCHOTTKY 200V 10A ITO220AC

Taiwan Semiconductor Corporation

2,442 0.00

RFQ

MBRF10200HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 200 V 200 V 10A -55°C ~ 150°C 1.05 V @ 10 A
1N4936GHA0G

1N4936GHA0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

2,334 0.00

RFQ

1N4936GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.2 V @ 1 A
SF65G A0G

SF65G A0G

DIODE GEN PURP 300V 6A DO201AD

Taiwan Semiconductor Corporation

2,592 0.00

RFQ

SF65G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 6A -55°C ~ 150°C 1.3 V @ 6 A
HERAF1604G C0G

HERAF1604G C0G

DIODE GEN PURP 300V 16A ITO220AC

Taiwan Semiconductor Corporation

2,781 0.00

RFQ

HERAF1604G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 150pF @ 4V, 1MHz 50 ns 10 µA @ 300 V 300 V 16A -55°C ~ 150°C 1 V @ 16 A
MBRF1035 C0G

MBRF1035 C0G

DIODE SCHOTTKY 35V 10A ITO220AC

Taiwan Semiconductor Corporation

2,129 0.00

RFQ

MBRF1035 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 35 V 35 V 10A -55°C ~ 150°C 700 mV @ 10 A
1N4937G A0G

1N4937G A0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

2,301 0.00

RFQ

1N4937G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.2 V @ 1 A
SF65GHA0G

SF65GHA0G

DIODE GEN PURP 300V 6A DO201AD

Taiwan Semiconductor Corporation

2,116 0.00

RFQ

SF65GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 6A -55°C ~ 150°C 1.3 V @ 6 A
HERAF1605G C0G

HERAF1605G C0G

DIODE GEN PURP 400V 16A ITO220AC

Taiwan Semiconductor Corporation

2,496 0.00

RFQ

HERAF1605G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 150pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 16A -55°C ~ 150°C 1.3 V @ 16 A
1N4937GHA0G

1N4937GHA0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

2,132 0.00

RFQ

1N4937GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.2 V @ 1 A
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