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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SF11G R0G

SF11G R0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation

3,628 0.00

RFQ

SF11G R0G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 950 mV @ 1 A
1N5821 A0G

1N5821 A0G

DIODE SCHOTTKY 30V 3A DO201AD

Taiwan Semiconductor Corporation

3,286 0.00

RFQ

1N5821 A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 200pF @ 4V, 1MHz - 500 µA @ 30 V 30 V 3A -55°C ~ 125°C 500 mV @ 3 A
SF11GHR0G

SF11GHR0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation

3,881 0.00

RFQ

SF11GHR0G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 950 mV @ 1 A
1N5821HA0G

1N5821HA0G

DIODE SCHOTTKY 30V 3A DO201AD

Taiwan Semiconductor Corporation

3,370 0.00

RFQ

1N5821HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 200pF @ 4V, 1MHz - 500 µA @ 30 V 30 V 3A -55°C ~ 125°C 500 mV @ 3 A
SF12G R0G

SF12G R0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

2,629 0.00

RFQ

SF12G R0G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 950 mV @ 1 A
1N5822 A0G

1N5822 A0G

DIODE SCHOTTKY 40V 3A DO201AD

Taiwan Semiconductor Corporation

2,818 0.00

RFQ

1N5822 A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 200pF @ 4V, 1MHz - 500 µA @ 40 V 40 V 3A -55°C ~ 125°C 525 mV @ 3 A
SF12GHR0G

SF12GHR0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

2,136 0.00

RFQ

SF12GHR0G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 950 mV @ 1 A
1N5822HA0G

1N5822HA0G

DIODE SCHOTTKY 40V 3A DO201AD

Taiwan Semiconductor Corporation

2,623 0.00

RFQ

1N5822HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 200pF @ 4V, 1MHz - 500 µA @ 40 V 40 V 3A -55°C ~ 125°C 525 mV @ 3 A
SF13G R0G

SF13G R0G

DIODE GEN PURP 150V 1A DO204AL

Taiwan Semiconductor Corporation

3,827 0.00

RFQ

SF13G R0G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 1A -55°C ~ 150°C 950 mV @ 1 A
1T1G A0G

1T1G A0G

DIODE GEN PURP 50V 1A TS-1

Taiwan Semiconductor Corporation

2,841 0.00

RFQ

1T1G A0G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1.1 V @ 1 A
SF13GHR0G

SF13GHR0G

DIODE GEN PURP 150V 1A DO204AL

Taiwan Semiconductor Corporation

2,770 0.00

RFQ

SF13GHR0G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 1A -55°C ~ 150°C 950 mV @ 1 A
1T2G A0G

1T2G A0G

DIODE GEN PURP 100V 1A TS-1

Taiwan Semiconductor Corporation

3,793 0.00

RFQ

1T2G A0G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.1 V @ 1 A
SF17G R0G

SF17G R0G

DIODE GEN PURP 500V 1A DO204AL

Taiwan Semiconductor Corporation

2,111 0.00

RFQ

SF17G R0G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 10pF @ 4V, 1MHz 35 ns 5 µA @ 500 V 500 V 1A -55°C ~ 150°C 1.7 V @ 1 A
1T3G A0G

1T3G A0G

DIODE GEN PURP 200V 1A TS-1

Taiwan Semiconductor Corporation

3,437 0.00

RFQ

1T3G A0G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
SF17GHR0G

SF17GHR0G

DIODE GEN PURP 500V 1A DO204AL

Taiwan Semiconductor Corporation

2,196 0.00

RFQ

SF17GHR0G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 10pF @ 4V, 1MHz 35 ns 5 µA @ 500 V 500 V 1A -55°C ~ 150°C 1.7 V @ 1 A
1T4G A0G

1T4G A0G

DIODE GEN PURP 400V 1A TS-1

Taiwan Semiconductor Corporation

3,346 0.00

RFQ

1T4G A0G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
1T5G A0G

1T5G A0G

DIODE GEN PURP 600V 1A TS-1

Taiwan Semiconductor Corporation

3,860 0.00

RFQ

1T5G A0G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1 V @ 1 A
1T6G A0G

1T6G A0G

DIODE GEN PURP 800V 1A TS-1

Taiwan Semiconductor Corporation

3,028 0.00

RFQ

1T6G A0G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1 V @ 1 A
UF1J A0G

UF1J A0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

2,306 0.00

RFQ

UF1J A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
1T7G A0G

1T7G A0G

DIODE GEN PURP 1A TS-1

Taiwan Semiconductor Corporation

2,173 0.00

RFQ

1T7G A0G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 1000 V - 1A -55°C ~ 150°C 1 V @ 1 A
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