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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
HERF1008GAHC0G

HERF1008GAHC0G

DIODE, HIGH EFFICIENT

Taiwan Semiconductor Corporation

2,449 1.26

RFQ

HERF1008GAHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 80 ns 10 µA @ 1000 V 1000 V 10A -55°C ~ 150°C 1.7 V @ 5 A
HERA808G

HERA808G

DIODE GEN PURP 8A TO220AC

Taiwan Semiconductor Corporation

3,143 1.39

RFQ

HERA808G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 55pF @ 4V, 1MHz 80 ns 10 µA @ 1000 V - 8A -55°C ~ 150°C 1.7 V @ 8 A
MBRF10200

MBRF10200

DIODE SCHOTTKY 10A 200V ITO220AC

Taiwan Semiconductor Corporation

2,506 1.63

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 200 V 200 V 10A (DC) -55°C ~ 150°C 1.05 V @ 10 A
UGS20JH

UGS20JH

50NS, 20A, 600V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

2,487 2.82

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 94.5pF @ 4V, 1MHz 50 ns 1 µA @ 600 V 600 V 20A (DC) -55°C ~ 150°C 2 V @ 20 A
ES1BL R3G

ES1BL R3G

DIODE GEN PURP 100V 1A SUB SMA

Taiwan Semiconductor Corporation

2,931 0.69

RFQ

ES1BL R3G

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 950 mV @ 1 A
HERAF1606G C0G

HERAF1606G C0G

DIODE GEN PURP 600V 16A ITO220AC

Taiwan Semiconductor Corporation

2,716 1.87

RFQ

HERAF1606G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 110pF @ 4V, 1MHz 80 ns 10 µA @ 600 V 600 V 16A -55°C ~ 150°C 1.7 V @ 16 A
UGS30JH

UGS30JH

50NS, 30A, 600V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

3,131 3.24

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 128pF @ 4V, 1MHz 50 ns 1 µA @ 600 V 600 V 30A (DC) -55°C ~ 150°C 2 V @ 30 A
ES1JL R3G

ES1JL R3G

DIODE GEN PURP 600V 1A SUB SMA

Taiwan Semiconductor Corporation

2,643 0.70

RFQ

ES1JL R3G

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 8pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
1N4936G R0G

1N4936G R0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

3,117 0.05

RFQ

1N4936G R0G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.2 V @ 1 A
1N4937G R0G

1N4937G R0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

3,541 0.05

RFQ

1N4937G R0G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.2 V @ 1 A
BA159G R0G

BA159G R0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

2,352 0.05

RFQ

BA159G R0G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 250 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.2 V @ 1 A
FR105G R0G

FR105G R0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

3,137 0.05

RFQ

FR105G R0G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.3 V @ 1 A
FR106G R0G

FR106G R0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation

3,737 0.05

RFQ

FR106G R0G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 500 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.3 V @ 1 A
FR107G R0G

FR107G R0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

2,774 0.05

RFQ

FR107G R0G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 500 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.3 V @ 1 A
SS16LW RVG

SS16LW RVG

DIODE SCHOTTKY 60V 1A SOD123W

Taiwan Semiconductor Corporation

2,803 0.51

RFQ

SS16LW RVG

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 60 V 60 V 1A -55°C ~ 150°C 700 mV @ 1 A
S1D M2G

S1D M2G

DIODE GEN PURP 200V 1A DO214AC

Taiwan Semiconductor Corporation

2,611 0.06

RFQ

S1D M2G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 12pF @ 4V, 1MHz 1.5 µs 1 µA @ 200 V 200 V 1A -55°C ~ 175°C 1.1 V @ 1 A
BA157G R0G

BA157G R0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

2,740 0.06

RFQ

BA157G R0G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.2 V @ 1 A
BA158G R0G

BA158G R0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

2,568 0.06

RFQ

BA158G R0G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.2 V @ 1 A
FR104G R0G

FR104G R0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

2,133 0.06

RFQ

FR104G R0G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
BA157GHR0G

BA157GHR0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

3,423 0.06

RFQ

BA157GHR0G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.2 V @ 1 A
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