Chip Start Electronics Co., Limited

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Mfr. Part #	Availability	Quantity	Datasheet	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
SS310LHRUG DIODE SCHOTTKY 100V 3A SUB SMA Taiwan Semiconductor Corporation	3,400	RFQ	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 100 V	100 V	3A	-55°C ~ 150°C	850 mV @ 3 A
SS310LHRVG DIODE SCHOTTKY 100V 3A SUB SMA Taiwan Semiconductor Corporation	2,308	RFQ	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 100 V	100 V	3A	-55°C ~ 150°C	850 mV @ 3 A
SS34LHRVG DIODE SCHOTTKY 40V 3A SUB SMA Taiwan Semiconductor Corporation	3,261	RFQ	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	500 µA @ 40 V	40 V	3A	-55°C ~ 125°C	500 mV @ 3 A
SF1602PTHC0G DIODE GEN PURP 100V 16A TO247AD Taiwan Semiconductor Corporation	3,122	RFQ	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	16A	-55°C ~ 150°C	950 mV @ 8 A
SF1603G C0G DIODE GEN PURP 150V 16A TO220AB Taiwan Semiconductor Corporation	2,667	RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	10 µA @ 150 V	150 V	16A	-55°C ~ 150°C	975 mV @ 8 A
SF1603GHC0G DIODE GEN PURP 150V 16A TO220AB Taiwan Semiconductor Corporation	2,580	RFQ	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	10 µA @ 150 V	150 V	16A	-55°C ~ 150°C	975 mV @ 8 A
SF1603PT C0G DIODE GEN PURP 150V 16A TO247AD Taiwan Semiconductor Corporation	3,024	RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 150 V	150 V	16A	-55°C ~ 150°C	950 mV @ 8 A
SF1603PTHC0G DIODE GEN PURP 150V 16A TO247AD Taiwan Semiconductor Corporation	3,596	RFQ	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 150 V	150 V	16A	-55°C ~ 150°C	950 mV @ 8 A
SF1604GHC0G DIODE GEN PURP 200V 16A TO220AB Taiwan Semiconductor Corporation	3,561	RFQ	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	16A	-55°C ~ 150°C	975 mV @ 8 A
SF1604PT C0G DIODE GEN PURP 200V 16A TO247AD Taiwan Semiconductor Corporation	3,297	RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	16A	-55°C ~ 150°C	950 mV @ 8 A
SF1604PTHC0G DIODE GEN PURP 200V 16A TO247AD Taiwan Semiconductor Corporation	2,602	RFQ	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	16A	-55°C ~ 150°C	950 mV @ 8 A
SF1605G C0G DIODE GEN PURP 300V 16A TO220AB Taiwan Semiconductor Corporation	3,766	RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	16A	-55°C ~ 150°C	1.3 V @ 8 A
SF1605GHC0G DIODE GEN PURP 300V 16A TO220AB Taiwan Semiconductor Corporation	2,136	RFQ	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	16A	-55°C ~ 150°C	1.3 V @ 8 A
SF1605PT C0G DIODE GEN PURP 300V 16A TO247AD Taiwan Semiconductor Corporation	3,821	RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	16A	-55°C ~ 150°C	1.3 V @ 8 A
SF1605PTHC0G DIODE GEN PURP 300V 16A TO247AD Taiwan Semiconductor Corporation	2,695	RFQ	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	16A	-55°C ~ 150°C	1.3 V @ 8 A
SF1606GHC0G DIODE GEN PURP 400V 16A TO220AB Taiwan Semiconductor Corporation	2,013	RFQ	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 400 V	400 V	16A	-55°C ~ 150°C	1.3 V @ 8 A
SF1606PTHC0G DIODE GEN PURP 400V 16A TO247AD Taiwan Semiconductor Corporation	3,980	RFQ	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 400 V	400 V	16A	-55°C ~ 150°C	1.3 V @ 8 A
SF1607G C0G DIODE GEN PURP 500V 16A TO220AB Taiwan Semiconductor Corporation	3,368	RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	16A	-55°C ~ 150°C	1.7 V @ 8 A
SF1607GHC0G DIODE GEN PURP 500V 16A TO220AB Taiwan Semiconductor Corporation	2,164	RFQ	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	16A	-55°C ~ 150°C	1.7 V @ 8 A
SF1607PT C0G DIODE GEN PURP 500V 16A TO247AD Taiwan Semiconductor Corporation	2,814	RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	16A	-55°C ~ 150°C	1.7 V @ 8 A