Chip Start Electronics Co., Limited

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Packaging	Series	ProductStatus	FETType	Technology	DraintoSourceVoltage(Vdss)	Current-ContinuousDrain(Id)@25°C	DriveVoltage(MaxRdsOnMinRdsOn)	RdsOn(Max)@IdVgs	Vgs(th)(Max)@Id	GateCharge(Qg)(Max)@Vgs	Vgs(Max)	InputCapacitance(Ciss)(Max)@Vds	FETFeature	PowerDissipation(Max)	OperatingTemperature	MountingType
IRFP350LCPBF MOSFET N-CH 400V 16A TO247-3 Vishay Siliconix	3,302	6.80	RFQ	Datasheet	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	400 V	16A (Tc)	10V	300mOhm @ 9.6A, 10V	4V @ 250µA	76 nC @ 10 V	±30V	2200 pF @ 25 V	-	190W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
IRFI644GPBF MOSFET N-CH 250V 7.9A TO220-3 Vishay Siliconix	940	3.09	RFQ	Datasheet	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	250 V	7.9A (Tc)	10V	280mOhm @ 4.7A, 10V	4V @ 250µA	68 nC @ 10 V	±20V	1300 pF @ 25 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
SIHFPS37N50A-GE3 POWER MOSFET SUPER-247, 130 M @ Vishay Siliconix	3,112	7.05	RFQ	Datasheet	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	500 V	36A (Tc)	10V	130mOhm @ 22A, 10V	4V @ 250µA	180 nC @ 10 V	±30V	5579 pF @ 25 V	-	446W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
IRFR9214PBF MOSFET P-CH 250V 2.7A DPAK Vishay Siliconix	3,239	1.62	RFQ	Datasheet	Tube	-	Active	P-Channel	MOSFET (Metal Oxide)	250 V	2.7A (Tc)	10V	3Ohm @ 1.7A, 10V	4V @ 250µA	14 nC @ 10 V	±20V	220 pF @ 25 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
SUP40012EL-GE3 MOSFET N-CH 40V 150A TO220AB Vishay Siliconix	608	2.45	RFQ	Datasheet	Tube	TrenchFET®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	150A (Tc)	4.5V, 10V	1.79mOhm @ 30A, 10V	2.5V @ 250µA	195 nC @ 10 V	±20V	10930 pF @ 20 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
IRLZ14STRLPBF MOSFET N-CH 60V 10A D2PAK Vishay Siliconix	938	1.70	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	-	Active	N-Channel	MOSFET (Metal Oxide)	60 V	10A (Tc)	4V, 5V	200mOhm @ 6A, 5V	2V @ 250µA	8.4 nC @ 5 V	±10V	400 pF @ 25 V	-	3.7W (Ta), 43W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
IRF530PBF-BE3 MOSFET N-CH 100V 14A TO220AB Vishay Siliconix	943	1.47	RFQ		Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	100 V	14A (Tc)	10V	160mOhm @ 8.4A, 10V	4V @ 250µA	26 nC @ 10 V	±20V	670 pF @ 25 V	-	88W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
SIHP8N50D-GE3 MOSFET N-CH 500V 8.7A TO220AB Vishay Siliconix	296	1.47	RFQ	Datasheet	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	500 V	8.7A (Tc)	10V	850mOhm @ 4A, 10V	5V @ 250µA	30 nC @ 10 V	±30V	527 pF @ 100 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
IRFBC20PBF MOSFET N-CH 600V 2.2A TO220AB Vishay Siliconix	183	1.47	RFQ	Datasheet	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	600 V	2.2A (Tc)	10V	4.4Ohm @ 1.3A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	350 pF @ 25 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
SIHP10N40D-GE3 MOSFET N-CH 400V 10A TO220AB Vishay Siliconix	136	1.51	RFQ	Datasheet	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	400 V	10A (Tc)	10V	600mOhm @ 5A, 10V	5V @ 250µA	30 nC @ 10 V	±30V	526 pF @ 100 V	-	147W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
IRF9Z10PBF MOSFET P-CH 60V 6.7A TO220AB Vishay Siliconix	1,000	1.70	RFQ	Datasheet	Tube	-	Active	P-Channel	MOSFET (Metal Oxide)	60 V	6.7A (Tc)	10V	500mOhm @ 4A, 10V	4V @ 250µA	12 nC @ 10 V	±20V	270 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
IRFBG20PBF-BE3 MOSFET N-CH 1000V 1.4A TO220AB Vishay Siliconix	902	1.92	RFQ		Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	1.4A (Tc)	10V	11Ohm @ 840mA, 10V	4V @ 250µA	38 nC @ 10 V	±20V	500 pF @ 25 V	-	54W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
SIHP12N50E-GE3 MOSFET N-CH 500V 10.5A TO220AB Vishay Siliconix	998	1.95	RFQ	Datasheet	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	500 V	10.5A (Tc)	10V	380mOhm @ 6A, 10V	4V @ 250µA	50 nC @ 10 V	±30V	886 pF @ 100 V	-	114W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
IRFD320PBF MOSFET N-CH 400V 490MA 4DIP Vishay Siliconix	484	1.95	RFQ	Datasheet	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	400 V	490mA (Ta)	10V	1.8Ohm @ 210mA, 10V	4V @ 250µA	20 nC @ 10 V	±20V	410 pF @ 25 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	Through Hole
IRF9610SPBF MOSFET P-CH 200V 1.8A D2PAK Vishay Siliconix	978	2.04	RFQ	Datasheet	Tube	-	Active	P-Channel	MOSFET (Metal Oxide)	200 V	1.8A (Tc)	10V	3Ohm @ 900mA, 10V	4V @ 250µA	11 nC @ 10 V	±20V	170 pF @ 25 V	-	3W (Ta), 20W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
IRF9Z24SPBF MOSFET P-CH 60V 11A D2PAK Vishay Siliconix	180	2.09	RFQ	Datasheet	Tube	-	Active	P-Channel	MOSFET (Metal Oxide)	60 V	11A (Tc)	10V	280mOhm @ 6.6A, 10V	4V @ 250µA	19 nC @ 10 V	±20V	570 pF @ 25 V	-	3.7W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
SIHD7N60E-GE3 MOSFET N-CH 600V 7A DPAK Vishay Siliconix	169	2.10	RFQ	Datasheet	Bulk	-	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Tc)	10V	600mOhm @ 3.5A, 10V	4V @ 250µA	40 nC @ 10 V	±30V	680 pF @ 100 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
SIHP11N80AE-GE3 MOSFET N-CH 800V 8A TO220AB Vishay Siliconix	921	2.12	RFQ	Datasheet	Tube	E	Active	N-Channel	MOSFET (Metal Oxide)	800 V	8A (Tc)	10V	450mOhm @ 5.5A, 10V	4V @ 250µA	42 nC @ 10 V	±30V	804 pF @ 100 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
IRF624SPBF MOSFET N-CH 250V 4.4A D2PAK Vishay Siliconix	194	2.21	RFQ	Datasheet	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	250 V	4.4A (Tc)	10V	1.1Ohm @ 2.6A, 10V	4V @ 250µA	14 nC @ 10 V	±20V	260 pF @ 25 V	-	3.1W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
IRFI510GPBF MOSFET N-CH 100V 4.5A TO220-3 Vishay Siliconix	995	2.27	RFQ	Datasheet	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	100 V	4.5A (Tc)	10V	540mOhm @ 2.7A, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	180 pF @ 25 V	-	27W (Tc)	-55°C ~ 175°C (TJ)	Through Hole