Chip Start Electronics Co., Limited

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Packaging	Series	ProductStatus	FETType	Technology	DraintoSourceVoltage(Vdss)	Current-ContinuousDrain(Id)@25°C	DriveVoltage(MaxRdsOnMinRdsOn)	RdsOn(Max)@IdVgs	Vgs(th)(Max)@Id	GateCharge(Qg)(Max)@Vgs	Vgs(Max)	InputCapacitance(Ciss)(Max)@Vds	FETFeature	PowerDissipation(Max)	OperatingTemperature	MountingType
SCT3040KRC14 SICFET N-CH 1200V 55A TO247-4L Rohm Semiconductor	212	56.59	RFQ	Datasheet	Tube	-	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Tc)	18V	52mOhm @ 20A, 18V	5.6V @ 10mA	107 nC @ 18 V	+22V, -4V	1337 pF @ 800 V	-	262W	175°C (TJ)	Through Hole
SCT3040KLHRC11 SICFET N-CH 1200V 55A TO247N Rohm Semiconductor	206	59.02	RFQ	Datasheet	Tube	Automotive, AEC-Q101	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Ta)	18V	52mOhm @ 20A, 18V	5.6V @ 10mA	107 nC @ 18 V	+22V, -4V	1337 pF @ 800 V	-	262W	175°C (TJ)	Through Hole
SCT3030KLGC11 SICFET N-CH 1200V 72A TO247N Rohm Semiconductor	161	84.94	RFQ	Datasheet	Tube	-	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	72A (Tc)	18V	39mOhm @ 27A, 18V	5.6V @ 13.3mA	131 nC @ 18 V	+22V, -4V	2222 pF @ 800 V	-	339W (Tc)	175°C (TJ)	Through Hole
SCT3060ARC14 SICFET N-CH 650V 39A TO247-4L Rohm Semiconductor	133	25.42	RFQ	Datasheet	Tube	-	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	39A (Tc)	18V	78mOhm @ 13A, 18V	5.6V @ 6.67mA	58 nC @ 18 V	+22V, -4V	852 pF @ 500 V	-	165W	175°C (TJ)	Through Hole
SCT3030ALHRC11 SICFET N-CH 650V 70A TO247N Rohm Semiconductor	222	55.86	RFQ	Datasheet	Tube	Automotive, AEC-Q101	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	70A (Tc)	18V	39mOhm @ 27A, 18V	5.6V @ 13.3mA	104 nC @ 18 V	+22V, -4V	1526 pF @ 500 V	-	262W	175°C (TJ)	Through Hole
BSM400C12P3G202 SICFET N-CH 1200V 400A MODULE Rohm Semiconductor	3,261	1098.00	RFQ	Datasheet	Tray	-	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	400A (Tc)	-	-	5.6V @ 106.8mA	-	+22V, -4V	17000 pF @ 10 V	-	1570W (Tc)	175°C (TJ)	Chassis Mount
RJP020N06T100 MOSFET N-CH 60V 2A MPT3 Rohm Semiconductor	17,000	0.95	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	-	Active	N-Channel	MOSFET (Metal Oxide)	60 V	2A (Ta)	2.5V, 4.5V	240mOhm @ 2A, 4.5V	1.5V @ 1mA	10 nC @ 4 V	±12V	160 pF @ 10 V	-	500mW (Ta)	150°C (TJ)	Surface Mount
R6024KNX MOSFET N-CH 600V 24A TO220FM Rohm Semiconductor	2,513	2.99	RFQ	Datasheet	Bulk	-	Active	N-Channel	MOSFET (Metal Oxide)	600 V	24A (Tc)	10V	165mOhm @ 11.3A, 10V	5V @ 1mA	45 nC @ 10 V	±20V	2000 pF @ 25 V	-	74W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
SCT3080ARC14 SICFET N-CH 650V 30A TO247-4L Rohm Semiconductor	2,047	21.17	RFQ	Datasheet	Tube	-	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	30A (Tc)	18V	104mOhm @ 10A, 18V	5.6V @ 5mA	48 nC @ 18 V	+22V, -4V	571 pF @ 500 V	-	134W	175°C (TJ)	Through Hole
SCT3040KLGC11 SICFET N-CH 1200V 55A TO247N Rohm Semiconductor	1,350	41.63	RFQ	Datasheet	Tube	-	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Tc)	18V	52mOhm @ 20A, 18V	5.6V @ 10mA	107 nC @ 18 V	+22V, -4V	1337 pF @ 800 V	-	262W (Tc)	175°C (TJ)	Through Hole
RCX081N20 MOSFET N-CH 200V 8A TO220FM Rohm Semiconductor	203	1.17	RFQ	Datasheet	Bulk	-	Active	N-Channel	MOSFET (Metal Oxide)	200 V	8A (Tc)	10V	770mOhm @ 4A, 10V	5.25V @ 1mA	8.5 nC @ 10 V	±30V	330 pF @ 25 V	-	2.23W (Ta), 40W (Tc)	150°C (TJ)	Through Hole
RCX200N20 MOSFET N-CH 200V 20A TO220FM Rohm Semiconductor	146	1.71	RFQ	Datasheet	Bulk	-	Active	N-Channel	MOSFET (Metal Oxide)	200 V	20A (Tc)	10V	130mOhm @ 10A, 10V	5V @ 1mA	40 nC @ 10 V	±30V	1900 pF @ 25 V	-	2.23W (Ta), 40W (Tc)	150°C (TJ)	Through Hole
R6015KNX MOSFET N-CH 600V 15A TO220FM Rohm Semiconductor	513	2.28	RFQ	Datasheet	Bulk	-	Active	N-Channel	MOSFET (Metal Oxide)	600 V	15A (Tc)	10V	290mOhm @ 6.5A, 10V	5V @ 1mA	27.5 nC @ 10 V	±20V	1050 pF @ 25 V	-	60W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
RCX100N25 MOSFET N-CH 250V 10A TO220FM Rohm Semiconductor	478	2.35	RFQ	Datasheet	Bulk	-	Active	N-Channel	MOSFET (Metal Oxide)	250 V	10A (Ta)	10V	-	-	-	±30V	-	-	40W (Tc)	150°C (TJ)	Through Hole
RCX220N25 MOSFET N-CH 250V 22A TO220FM Rohm Semiconductor	108	2.36	RFQ	Datasheet	Bulk	-	Active	N-Channel	MOSFET (Metal Oxide)	250 V	22A (Tc)	10V	140mOhm @ 11A, 10V	5V @ 1mA	60 nC @ 10 V	±30V	3200 pF @ 25 V	-	2.23W (Ta), 40W (Tc)	150°C (TJ)	Through Hole
R6004JNXC7G MOSFET N-CH 600V 4A TO220FM Rohm Semiconductor	123	2.56	RFQ	Datasheet	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	600 V	4A (Tc)	15V	1.43Ohm @ 2A, 15V	7V @ 450µA	10.5 nC @ 15 V	±30V	260 pF @ 100 V	-	35W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
R6007ENX MOSFET N-CH 600V 7A TO220FM Rohm Semiconductor	159	2.58	RFQ	Datasheet	Bulk	-	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Tc)	10V	620mOhm @ 2.4A, 10V	4V @ 1mA	20 nC @ 10 V	±20V	390 pF @ 25 V	-	40W (Tc)	150°C (TJ)	Through Hole
R6006JNXC7G MOSFET N-CH 600V 6A TO220FM Rohm Semiconductor	894	3.12	RFQ	Datasheet	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	600 V	6A (Tc)	15V	936mOhm @ 3A, 15V	7V @ 800µA	15.5 nC @ 15 V	±30V	410 pF @ 100 V	-	43W (Tc)	150°C (TJ)	Through Hole
RCX450N20 MOSFET N-CH 200V 45A TO220FM Rohm Semiconductor	157	3.18	RFQ	Datasheet	Bulk	-	Active	N-Channel	MOSFET (Metal Oxide)	200 V	45A (Tc)	10V	55mOhm @ 22.5A, 10V	5V @ 1mA	80 nC @ 10 V	±30V	4200 pF @ 25 V	-	2.23W (Ta), 40W (Tc)	150°C (TJ)	Through Hole
R6020ENX MOSFET N-CH 600V 20A TO220FM Rohm Semiconductor	3,583	3.66	RFQ	Datasheet	Bulk	-	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	196mOhm @ 10A, 10V	4V @ 1mA	60 nC @ 10 V	±20V	1400 pF @ 25 V	-	50W (Tc)	150°C (TJ)	Through Hole