Chip Start Electronics Co., Limited

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Packaging	Series	ProductStatus	FETType	Technology	DraintoSourceVoltage(Vdss)	Current-ContinuousDrain(Id)@25°C	DriveVoltage(MaxRdsOnMinRdsOn)	RdsOn(Max)@IdVgs	Vgs(th)(Max)@Id	GateCharge(Qg)(Max)@Vgs	Vgs(Max)	InputCapacitance(Ciss)(Max)@Vds	FETFeature	PowerDissipation(Max)	OperatingTemperature	MountingType
IPD90N06S4L-05 IPD90N06 - 55V-60V N-CHANNEL AUT Infineon Technologies	3,691	1.00	RFQ	Datasheet	Bulk	OptiMOS™	Active	N-Channel	MOSFET (Metal Oxide)	60 V	90A (Tc)	4.5V, 10V	4.6mOhm @ 90A, 10V	2.2V @ 60µA	110 nC @ 10 V	±16V	8180 pF @ 25 V	-	107W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
IPP50R399CP IPP50R399 - 500V COOLMOS N-CHANN Infineon Technologies	2,228	1.00	RFQ	Datasheet	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP60R180C7 13A, 600V, 0.18OHM, N-CHANNEL MO Infineon Technologies	2,168	1.00	RFQ	Datasheet	Bulk	CoolMOS™	Active	N-Channel	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V	180mOhm @ 5.3A, 10V	4V @ 260µA	24 nC @ 10 V	±20V	1080 pF @ 400 V	-	68W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
IPW60R190P6 MOSFET N-CH 600V 20.2A TO247 Infineon Technologies	3,129	1.00	RFQ	Datasheet	Bulk	CoolMOS™ P6	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20.2A (Tc)	-	190mOhm @ 7.6A, 10V	4.5V @ 630µA	37 nC @ 10 V	±20V	1750 pF @ 100 V	-	151W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
IPA80R1K4P7 POWER FIELD-EFFECT TRANSISTOR Infineon Technologies	2,312	1.00	RFQ	Datasheet	Bulk	CoolMOS™	Active	N-Channel	MOSFET (Metal Oxide)	800 V	4A (Tc)	10V	1.4Ohm @ 1.4A, 10V	3.5V @ 70µA	10 nC @ 10 V	±20V	250 pF @ 500 V	-	24W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
IPD050N03L G OPTLMOS N-CHANNEL POWER MOSFET Infineon Technologies	3,012	1.00	RFQ	Datasheet	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSZ22DN20NS3G BSZ22DN20 - 12V-300V N-CHANNEL P Infineon Technologies	3,513	1.00	RFQ	Datasheet	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPS65R1K4C6 MOSFET N-CH 650V 3.2A TO251-3 Infineon Technologies	2,411	1.00	RFQ	Datasheet	Bulk	CoolMOS™ C6	Active	N-Channel	MOSFET (Metal Oxide)	650 V	3.2A (Tc)	-	1.4Ohm @ 1A, 10V	3.5V @ 100µA	10.5 nC @ 10 V	±20V	225 pF @ 100 V	-	28W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
IPD50N04S4-08 IPD50N04 - 20V-40V N-CHANNEL AUT Infineon Technologies	2,958	1.00	RFQ	Datasheet	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC030N03LSG BSC030N03 - 12V-300V N-CHANNEL P Infineon Technologies	2,665	1.00	RFQ	Datasheet	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SPB07N60C3 SPB07N60 - 600V COOLMOS N-CHANNE Infineon Technologies	2,338	0.00	RFQ	Datasheet	Bulk	CoolMOS™	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	600mOhm @ 4.6A, 10V	3.9V @ 350µA	27 nC @ 10 V	±20V	790 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
IPB47N10SL-26 IPB47N10 - 75V-100V N-CHANNEL AU Infineon Technologies	2,824	1.00	RFQ	Datasheet	Bulk	SIPMOS®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	47A (Tc)	4.5V, 10V	26mOhm @ 33A, 10V	2V @ 2mA	135 nC @ 10 V	±20V	2500 pF @ 25 V	-	175W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
IPI600N25N3G IPI600N25 - 12V-300V N-CHANNEL P Infineon Technologies	2,838	1.00	RFQ	Datasheet	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC090N03MSG BSC090N03 - 12V-300V N-CHANNEL P Infineon Technologies	2,322	1.00	RFQ	Datasheet	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSS606NH6327 BSS606 - 250V-600V SMALL SIGNAL Infineon Technologies	3,495	1.00	RFQ	Datasheet	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSO080P03NS3G BSO080P03 - 20V-250V P-CHANNEL P Infineon Technologies	2,451	1.00	RFQ	Datasheet	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSS7728NH6327 SMALL SIGNAL N-CHANNEL MOSFET Infineon Technologies	3,749	1.00	RFQ	Datasheet	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC090N03LSG BSC090N03 - 12V-300V N-CHANNEL P Infineon Technologies	2,848	1.00	RFQ	Datasheet	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SPD15P10PG SPD15P10 - 20V-250V P-CHANNEL PO Infineon Technologies	3,220	1.00	RFQ	Datasheet	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SPP11N65C3XK SPP11N65 - 650V AND 700V COOLMOS Infineon Technologies	2,772	1.00	RFQ	Datasheet	Bulk	CoolMOS™	Active	N-Channel	MOSFET (Metal Oxide)	650 V	11A (Tc)	10V	380mOhm @ 7A, 10V	3.9V @ 500µA	60 nC @ 10 V	±20V	1200 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	Through Hole