Chip Start Electronics Co., Limited

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Packaging	Series	ProductStatus	FETType	Technology	DraintoSourceVoltage(Vdss)	Current-ContinuousDrain(Id)@25°C	DriveVoltage(MaxRdsOnMinRdsOn)	RdsOn(Max)@IdVgs	Vgs(th)(Max)@Id	GateCharge(Qg)(Max)@Vgs	Vgs(Max)	InputCapacitance(Ciss)(Max)@Vds	FETFeature	PowerDissipation(Max)	OperatingTemperature	MountingType
BTS112AE3045ANTMA1 N-CHANNEL POWER MOSFET Infineon Technologies	300	3.63	RFQ	Datasheet	Bulk	*	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPA075N15N3 N-CHANNEL POWER MOSFET Infineon Technologies	491	3.97	RFQ	Datasheet	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BTS132 N-CHANNEL POWER MOSFET Infineon Technologies	232	4.06	RFQ	Datasheet	Bulk	*	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IMW65R057M1HXKSA1 SILICON CARBIDE MOSFET, PG-TO247 Infineon Technologies	2,038	15.77	RFQ	Datasheet	Tube	CoolSiC™	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	35A (Tc)	18V	74mOhm @ 16.7A, 18V	5.7V @ 5mA	28 nC @ 18 V	+20V, -2V	930 pF @ 400 V	-	133W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
IMZA65R057M1HXKSA1 SILICON CARBIDE MOSFET, PG-TO247 Infineon Technologies	3,723	16.62	RFQ	Datasheet	Tube	CoolSiC™	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	35A (Tc)	18V	74mOhm @ 16.7A, 18V	5.7V @ 5mA	28 nC @ 18 V	+20V, -2V	930 pF @ 400 V	-	133W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
IPSA70R750P7SAKMA1 MOSFET N-CH 700V 6.5A TO251-3 Infineon Technologies	350	1.07	RFQ	Datasheet	Tube	CoolMOS™ P7	Active	N-Channel	MOSFET (Metal Oxide)	700 V	6.5A (Tc)	10V	750mOhm @ 1.4A, 10V	3.5V @ 70µA	8.3 nC @ 400 V	±16V	306 pF @ 400 V	-	34.7W (Tc)	-40°C ~ 150°C (TJ)	Through Hole
IPS65R950C6AKMA1 MOSFET N-CH 650V 4.5A TO251-3 Infineon Technologies	150	1.11	RFQ	Datasheet	Tube	CoolMOS™	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	4.5A (Tc)	10V	950mOhm @ 1.5A, 10V	3.5V @ 200µA	15.3 nC @ 10 V	±20V	328 pF @ 100 V	-	37W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
IRFSL7762PBF MOSFET N-CH 75V 85A TO262 Infineon Technologies	3,495	1.20	RFQ	Datasheet	Tube	HEXFET®, StrongIRFET™	Obsolete	N-Channel	MOSFET (Metal Oxide)	75 V	85A (Tc)	6V, 10V	6.7mOhm @ 51A, 10V	3.7V @ 100µA	130 nC @ 10 V	±20V	4440 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
IPI100N06S3L04XK MOSFET N-CH 55V 100A TO262-3 Infineon Technologies	2,112	1.27	RFQ	Datasheet	Tube	OptiMOS™	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	100A (Tc)	5V, 10V	3.8mOhm @ 80A, 10V	2.2V @ 150µA	362 nC @ 10 V	±16V	17270 pF @ 25 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
AUIRFR2905Z MOSFET N-CH 55V 42A DPAK Infineon Technologies	278	1.61	RFQ	Datasheet	Tube	HEXFET®	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	42A (Tc)	10V	14.5mOhm @ 36A, 10V	4V @ 250µA	44 nC @ 10 V	±20V	1380 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
IPAW60R380CEXKSA1 MOSFET N-CH 600V 15A TO220 Infineon Technologies	257	1.62	RFQ	Datasheet	Tube	CoolMOS™	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	15A (Tc)	10V	380mOhm @ 3.8A, 10V	3.5V @ 320µA	32 nC @ 10 V	±20V	700 pF @ 100 V	Super Junction	31W (Tc)	-40°C ~ 150°C (TJ)	Through Hole
IRF3205LPBF MOSFET N-CH 55V 110A TO262 Infineon Technologies	313	1.80	RFQ	Datasheet	Tube	HEXFET®	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	55 V	110A (Tc)	10V	8mOhm @ 62A, 10V	4V @ 250µA	146 nC @ 10 V	±20V	3247 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
IPP16CN10NGXKSA1 MOSFET N-CH 100V 53A TO220-3 Infineon Technologies	134	2.00	RFQ	Datasheet	Tube	OptiMOS™	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	100 V	53A (Tc)	10V	16.5mOhm @ 53A, 10V	4V @ 61µA	48 nC @ 10 V	±20V	3220 pF @ 50 V	-	100W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
AUIRFZ24NS MOSFET N-CH 55V 17A DPAK Infineon Technologies	682	2.89	RFQ	Datasheet	Tube	HEXFET®	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	55 V	17A (Tc)	10V	70mOhm @ 10A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	370 pF @ 25 V	-	3.8W (Ta), 45W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
IRL3705ZLPBF MOSFET N-CH 55V 75A TO262 Infineon Technologies	500	2.90	RFQ	Datasheet	Tube	HEXFET®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	55 V	75A (Tc)	4.5V, 10V	8mOhm @ 52A, 10V	3V @ 250µA	60 nC @ 5 V	±16V	2880 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
IRF3805S-7PPBF MOSFET N-CH 55V 160A D2PAK Infineon Technologies	2,833	5.80	RFQ	Datasheet	Tube	HEXFET®	Discontinued at Mosen	N-Channel	MOSFET (Metal Oxide)	55 V	160A (Tc)	10V	2.6mOhm @ 140A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	7820 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
BSD316SNL6327XT MOSFET N-CH 30V 1.4A SOT363-6 Infineon Technologies	732	0.22	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	OptiMOS™	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	1.4A (Ta)	4.5V, 10V	160mOhm @ 1.4A, 10V	2V @ 3.7µA	0.6 nC @ 5 V	±20V	94 pF @ 15 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount
BSS123IXTSA1 SMALL SIGNAL MOSFETS PG-SOT23-3 Infineon Technologies	506	0.42	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	OptiMOS™	Active	N-Channel	MOSFET (Metal Oxide)	100 V	190mA (Ta)	4.5V, 10V	6Ohm @ 190mA, 10V	1.8V @ 13µA	0.63 nC @ 10 V	±20V	15 pF @ 50 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount
BSO051N03MSGXUMA1 SMALL SIGNAL FIELD-EFFECT TRANSI Infineon Technologies	2,500	0.28	RFQ	Datasheet	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSZ088N03LSG BSZ088N03 - 12V-300V N-CHANNEL P Infineon Technologies	3,871	0.30	RFQ	Datasheet	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-