Chip Start Electronics Co., Limited

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Packaging	Series	ProductStatus	FETType	Technology	DraintoSourceVoltage(Vdss)	Current-ContinuousDrain(Id)@25°C	DriveVoltage(MaxRdsOnMinRdsOn)	RdsOn(Max)@IdVgs	Vgs(th)(Max)@Id	GateCharge(Qg)(Max)@Vgs	Vgs(Max)	InputCapacitance(Ciss)(Max)@Vds	FETFeature	PowerDissipation(Max)	OperatingTemperature	MountingType
TK31V60W,LVQ MOSFET N-CH 600V 30.8A 4DFN Toshiba Semiconductor and Storage	2,710	4.95	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	DTMOSIV	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	98mOhm @ 15.4A, 10V	3.7V @ 1.5mA	86 nC @ 10 V	±30V	3000 pF @ 300 V	Super Junction	240W (Tc)	150°C (TJ)	Surface Mount
TK28N65W,S1F MOSFET N-CH 650V 27.6A TO247 Toshiba Semiconductor and Storage	3,759	5.05	RFQ	Datasheet	Tube	DTMOSIV	Active	N-Channel	MOSFET (Metal Oxide)	650 V	27.6A (Ta)	10V	110mOhm @ 13.8A, 10V	3.5V @ 1.6mA	75 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	Through Hole
TK20N60W,S1VF MOSFET N-CH 600V 20A TO247 Toshiba Semiconductor and Storage	2,140	5.20	RFQ	Datasheet	Tube	DTMOSIV	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Ta)	10V	155mOhm @ 10A, 10V	3.7V @ 1mA	48 nC @ 10 V	±30V	1680 pF @ 300 V	-	165W (Tc)	150°C (TJ)	Through Hole
TK110Z65Z,S1F POWER MOSFET TRANSISTOR TO-247-4 Toshiba Semiconductor and Storage	3,823	5.12	RFQ	Datasheet	Tube	DTMOSVI	Active	N-Channel	MOSFET (Metal Oxide)	650 V	24A (Ta)	10V	110mOhm @ 12A, 10V	4V @ 1.02mA	40 nC @ 10 V	±30V	2250 pF @ 300 V	-	190W (Tc)	150°C	Through Hole
TK20A60U(Q,M) MOSFET N-CH 600V 20A TO220SIS Toshiba Semiconductor and Storage	3,453	5.47	RFQ	Datasheet	Bulk	DTMOSII	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Ta)	10V	190mOhm @ 10A, 10V	5V @ 1mA	27 nC @ 10 V	±30V	1470 pF @ 10 V	-	45W (Tc)	150°C (TJ)	Through Hole
TK35A65W5,S5X MOSFET N-CH 650V 35A TO220SIS Toshiba Semiconductor and Storage	2,116	5.68	RFQ	Datasheet	Tube	DTMOSIV	Active	N-Channel	MOSFET (Metal Oxide)	650 V	35A (Ta)	10V	95mOhm @ 17.5A, 10V	4.5V @ 2.1mA	115 nC @ 10 V	±30V	4100 pF @ 300 V	-	50W (Tc)	150°C (TJ)	Through Hole
TK065Z65Z,S1F POWER MOSFET TRANSISTOR TO-247-4 Toshiba Semiconductor and Storage	3,429	6.47	RFQ	Datasheet	Tube	DTMOSVI	Active	N-Channel	MOSFET (Metal Oxide)	650 V	38A (Ta)	10V	65mOhm @ 19A, 10V	4V @ 1.69mA	62 nC @ 10 V	±30V	3650 pF @ 300 V	-	270W (Tc)	150°C	Through Hole
TK31E60W,S1VX MOSFET N-CH 600V 30.8A TO220 Toshiba Semiconductor and Storage	2,221	6.74	RFQ	Datasheet	Tube	DTMOSIV	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 15.4A, 10V	3.7V @ 1.5mA	86 nC @ 10 V	±30V	3000 pF @ 300 V	Super Junction	230W (Tc)	150°C (TJ)	Through Hole
TK31A60W,S4VX MOSFET N-CH 600V 30.8A TO220SIS Toshiba Semiconductor and Storage	3,074	6.74	RFQ	Datasheet	Tube	DTMOSIV	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 15.4A, 10V	3.7V @ 1.5mA	86 nC @ 10 V	±30V	3000 pF @ 300 V	Super Junction	45W (Tc)	150°C (TJ)	Through Hole
TK35N65W5,S1F MOSFET N-CH 650V 35A TO247 Toshiba Semiconductor and Storage	3,745	7.45	RFQ	Datasheet	Tube	DTMOSIV	Active	N-Channel	MOSFET (Metal Oxide)	650 V	35A (Ta)	10V	95mOhm @ 17.5A, 10V	4.5V @ 2.1mA	115 nC @ 10 V	±30V	4100 pF @ 300 V	-	270W (Tc)	150°C (TJ)	Through Hole
TK31J60W,S1VQ MOSFET N-CH 600V 30.8A TO3P Toshiba Semiconductor and Storage	3,066	7.62	RFQ	Datasheet	Tube	DTMOSIV	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 15.4A, 10V	3.7V @ 1.5mA	86 nC @ 10 V	±30V	3000 pF @ 300 V	Super Junction	230W (Tc)	150°C (TJ)	Through Hole
TK31J60W5,S1VQ MOSFET N-CH 600V 30.8A TO3P Toshiba Semiconductor and Storage	2,553	7.92	RFQ	Datasheet	Tube	DTMOSIV	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 15.4A, 10V	3.7V @ 1.5mA	105 nC @ 10 V	±30V	3000 pF @ 300 V	Super Junction	230W (Tc)	150°C (TJ)	Through Hole
TK62N60W5,S1VF PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	2,996	10.58	RFQ	Datasheet	Tube	DTMOSIV	Active	N-Channel	MOSFET (Metal Oxide)	600 V	61.8A (Ta)	10V	45mOhm @ 30.9A, 10V	4.5V @ 3.1mA	205 nC @ 10 V	±30V	6500 pF @ 300 V	-	400W (Tc)	150°C	Through Hole
TPCC8002-H(TE12L,Q MOSFET N-CH 30V 22A 8TSON Toshiba Semiconductor and Storage	2,660	0.00	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	U-MOSV-H	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	22A (Ta)	4.5V, 10V	8.3mOhm @ 11A, 10V	2.5V @ 1mA	27 nC @ 10 V	±20V	2500 pF @ 10 V	-	700mW (Ta), 30W (Tc)	150°C (TJ)	Surface Mount
TPC8109(TE12L) MOSFET P-CH 30V 10A 8-SOP Toshiba Semiconductor and Storage	3,579	0.00	RFQ	Datasheet	Cut Tape (CT)	-	Obsolete	P-Channel	MOSFET (Metal Oxide)	30 V	10A (Ta)	-	20mOhm @ 5A, 10V	2V @ 1mA	45 nC @ 10 V	-	2260 pF @ 10 V	-	-	-	Surface Mount
TPCA8016-H(TE12LQM MOSFET N-CH 60V 25A 8-SOPA Toshiba Semiconductor and Storage	3,780	0.00	RFQ	Datasheet	Digi-Reel®	-	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	25A (Ta)	-	21mOhm @ 13A, 10V	2.3V @ 1mA	22 nC @ 10 V	-	1375 pF @ 10 V	-	-	-	Surface Mount
TPCA8007-H(TE12L,Q MOSFET N-CH 100V 20A 8-SOPA Toshiba Semiconductor and Storage	3,584	0.00	RFQ	Datasheet	Cut Tape (CT)	*	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPCA8009-H(TE12L,Q MOSFET N-CH 150V 7A 8SOP Toshiba Semiconductor and Storage	2,580	0.00	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	7A (Ta)	10V	350mOhm @ 3.5A, 10V	4V @ 1mA	10 nC @ 10 V	±20V	600 pF @ 10 V	-	1.6W (Ta), 45W (Tc)	150°C (TJ)	Surface Mount
TPCA8010-H(TE12L,Q MOSFET N-CH 200V 5.5A 8SOP Toshiba Semiconductor and Storage	2,149	0.00	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	π-MOSV	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	5.5A (Ta)	10V	450mOhm @ 2.7A, 10V	4V @ 1mA	10 nC @ 10 V	±20V	600 pF @ 10 V	-	1.6W (Ta), 45W (Tc)	150°C (TJ)	Surface Mount
TPCA8008-H(TE12L,Q MOSFET N-CH 250V 4A 8SOP Toshiba Semiconductor and Storage	3,002	0.00	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	N-Channel	MOSFET (Metal Oxide)	250 V	4A (Ta)	10V	580mOhm @ 2A, 10V	4V @ 1mA	10 nC @ 10 V	±20V	600 pF @ 10 V	-	1.6W (Ta), 45W (Tc)	150°C (TJ)	Surface Mount