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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SFA1006G C0G

SFA1006G C0G

DIODE GEN PURP 400V 10A TO220AC

Taiwan Semiconductor Corporation

3,079 0.00

RFQ

SFA1006G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 10A -55°C ~ 150°C 1.3 V @ 10 A
SFA1006GHC0G

SFA1006GHC0G

DIODE GEN PURP 400V 10A TO220AC

Taiwan Semiconductor Corporation

2,840 0.00

RFQ

SFA1006GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 10A -55°C ~ 150°C 1.3 V @ 10 A
SFA1007G C0G

SFA1007G C0G

DIODE GEN PURP 500V 10A TO220AC

Taiwan Semiconductor Corporation

2,242 0.00

RFQ

SFA1007G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 10A -55°C ~ 150°C 1.7 V @ 10 A
SFA1007GHC0G

SFA1007GHC0G

DIODE GEN PURP 500V 10A TO220AC

Taiwan Semiconductor Corporation

3,038 0.00

RFQ

SFA1007GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 10A -55°C ~ 150°C 1.7 V @ 10 A
SFA1008G C0G

SFA1008G C0G

DIODE GEN PURP 600V 10A TO220AC

Taiwan Semiconductor Corporation

3,537 0.00

RFQ

SFA1008G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 10A -55°C ~ 150°C 1.7 V @ 10 A
SFA1008GHC0G

SFA1008GHC0G

DIODE GEN PURP 600V 10A TO220AC

Taiwan Semiconductor Corporation

3,871 0.00

RFQ

SFA1008GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 10A -55°C ~ 150°C 1.7 V @ 10 A
SFA801G C0G

SFA801G C0G

DIODE GEN PURP 50V 8A TO220AC

Taiwan Semiconductor Corporation

3,705 0.00

RFQ

SFA801G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 8A -55°C ~ 150°C 975 mV @ 8 A
SFA801GHC0G

SFA801GHC0G

DIODE GEN PURP 50V 8A TO220AC

Taiwan Semiconductor Corporation

3,565 0.00

RFQ

SFA801GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 8A -55°C ~ 150°C 975 mV @ 8 A
SFA802G C0G

SFA802G C0G

DIODE GEN PURP 100V 8A TO220AC

Taiwan Semiconductor Corporation

2,391 0.00

RFQ

SFA802G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 8A -55°C ~ 150°C 975 mV @ 8 A
SFA802GHC0G

SFA802GHC0G

DIODE GEN PURP 100V 8A TO220AC

Taiwan Semiconductor Corporation

3,341 0.00

RFQ

SFA802GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 8A -55°C ~ 150°C 975 mV @ 8 A
SFA803G C0G

SFA803G C0G

DIODE GEN PURP 150V 8A TO220AC

Taiwan Semiconductor Corporation

3,966 0.00

RFQ

SFA803G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 8A -55°C ~ 150°C 975 mV @ 8 A
SFA803GHC0G

SFA803GHC0G

DIODE GEN PURP 150V 8A TO220AC

Taiwan Semiconductor Corporation

3,292 0.00

RFQ

SFA803GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 8A -55°C ~ 150°C 975 mV @ 8 A
SFA804G C0G

SFA804G C0G

DIODE GEN PURP 200V 8A TO220AC

Taiwan Semiconductor Corporation

2,840 0.00

RFQ

SFA804G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 100pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 8A -55°C ~ 150°C 975 mV @ 8 A
SFA804GHC0G

SFA804GHC0G

DIODE GEN PURP 200V 8A TO220AC

Taiwan Semiconductor Corporation

2,339 0.00

RFQ

SFA804GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 8A -55°C ~ 150°C 975 mV @ 8 A
SFA805G C0G

SFA805G C0G

DIODE GEN PURP 300V 8A TO220AC

Taiwan Semiconductor Corporation

2,884 0.00

RFQ

SFA805G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 8A -55°C ~ 150°C 1.3 V @ 8 A
SFA805GHC0G

SFA805GHC0G

DIODE GEN PURP 300V 8A TO220AC

Taiwan Semiconductor Corporation

3,743 0.00

RFQ

SFA805GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 8A -55°C ~ 150°C 1.3 V @ 8 A
SFA806G C0G

SFA806G C0G

DIODE GEN PURP 400V 8A TO220AC

Taiwan Semiconductor Corporation

3,170 0.00

RFQ

SFA806G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 8A -55°C ~ 150°C 1.3 V @ 8 A
SFA806GHC0G

SFA806GHC0G

DIODE GEN PURP 400V 8A TO220AC

Taiwan Semiconductor Corporation

2,530 0.00

RFQ

SFA806GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 8A -55°C ~ 150°C 1.3 V @ 8 A
SFA807G C0G

SFA807G C0G

DIODE GEN PURP 500V 8A TO220AC

Taiwan Semiconductor Corporation

3,550 0.00

RFQ

SFA807G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 8A -55°C ~ 150°C 1.7 V @ 8 A
SFA807GHC0G

SFA807GHC0G

DIODE GEN PURP 500V 8A TO220AC

Taiwan Semiconductor Corporation

2,675 0.00

RFQ

SFA807GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 8A -55°C ~ 150°C 1.7 V @ 8 A
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