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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
HT15G A0G

HT15G A0G

DIODE GEN PURP 400V 1A TS-1

Taiwan Semiconductor Corporation

3,347 0.00

RFQ

HT15G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
HT16G A0G

HT16G A0G

DIODE GEN PURP 600V 1A TS-1

Taiwan Semiconductor Corporation

2,410 0.00

RFQ

HT16G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
HT17G A0G

HT17G A0G

DIODE GEN PURP 800V 1A TS-1

Taiwan Semiconductor Corporation

3,676 0.00

RFQ

HT17G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.7 V @ 1 A
HT18G A0G

HT18G A0G

DIODE GEN PURP 1A TS-1

Taiwan Semiconductor Corporation

2,159 0.00

RFQ

HT18G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
MUR160 A0G

MUR160 A0G

DIODE GEN PURP 600V 1A DO204AC

Taiwan Semiconductor Corporation

3,929 0.00

RFQ

MUR160 A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 27pF @ 4V, 1MHz 50 ns 5 µA @ 600 V 600 V 1A -55°C ~ 175°C 1.25 V @ 1 A
MUR160HA0G

MUR160HA0G

DIODE GEN PURP 600V 1A DO204AC

Taiwan Semiconductor Corporation

3,217 0.00

RFQ

MUR160HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 27pF @ 4V, 1MHz 50 ns 5 µA @ 600 V 600 V 1A -55°C ~ 175°C 1.25 V @ 1 A
MUR190 A0G

MUR190 A0G

DIODE GEN PURP 900V 1A DO204AC

Taiwan Semiconductor Corporation

3,772 0.00

RFQ

MUR190 A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 75 ns 5 µA @ 900 V 900 V 1A -55°C ~ 175°C 1.7 V @ 1 A
MUR190HA0G

MUR190HA0G

DIODE GEN PURP 900V 1A DO204AC

Taiwan Semiconductor Corporation

2,711 0.00

RFQ

MUR190HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 75 ns 5 µA @ 900 V 900 V 1A -55°C ~ 175°C 1.7 V @ 1 A
MUR420HA0G

MUR420HA0G

DIODE GEN PURP 200V 4A DO201AD

Taiwan Semiconductor Corporation

3,553 0.00

RFQ

MUR420HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 4A -55°C ~ 175°C 890 mV @ 4 A
MUR440 A0G

MUR440 A0G

DIODE GEN PURP 400V 4A DO201AD

Taiwan Semiconductor Corporation

3,113 0.00

RFQ

MUR440 A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 4A -55°C ~ 175°C 1.28 V @ 4 A
MUR440HA0G

MUR440HA0G

DIODE GEN PURP 400V 4A DO201AD

Taiwan Semiconductor Corporation

3,164 0.00

RFQ

MUR440HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 4A -55°C ~ 175°C 1.28 V @ 4 A
MUR460HA0G

MUR460HA0G

DIODE GEN PURP 600V 4A DO201AD

Taiwan Semiconductor Corporation

2,107 0.00

RFQ

MUR460HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 600 V 600 V 4A -55°C ~ 175°C 1.28 V @ 4 A
MUR4L20 A0G

MUR4L20 A0G

DIODE GEN PURP 200V 4A DO201AD

Taiwan Semiconductor Corporation

3,557 0.00

RFQ

MUR4L20 A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 4A -55°C ~ 175°C 890 mV @ 4 A
MUR4L20HA0G

MUR4L20HA0G

DIODE GEN PURP 200V 4A DO201AD

Taiwan Semiconductor Corporation

2,616 0.00

RFQ

MUR4L20HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 4A -55°C ~ 175°C 890 mV @ 4 A
MUR4L40 A0G

MUR4L40 A0G

DIODE GEN PURP 400V 4A DO201AD

Taiwan Semiconductor Corporation

3,697 0.00

RFQ

MUR4L40 A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 4A -55°C ~ 175°C 1.28 V @ 4 A
MUR4L40HA0G

MUR4L40HA0G

DIODE GEN PURP 400V 4A DO201AD

Taiwan Semiconductor Corporation

2,689 0.00

RFQ

MUR4L40HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 4A -55°C ~ 175°C 1.28 V @ 4 A
MUR4L60 A0G

MUR4L60 A0G

DIODE GEN PURP 600V 4A DO201AD

Taiwan Semiconductor Corporation

3,821 0.00

RFQ

MUR4L60 A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 600 V 600 V 4A -55°C ~ 175°C 1.28 V @ 4 A
MUR4L60HA0G

MUR4L60HA0G

DIODE GEN PURP 600V 4A DO201AD

Taiwan Semiconductor Corporation

2,404 0.00

RFQ

MUR4L60HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 600 V 600 V 4A -55°C ~ 175°C 1.28 V @ 4 A
P2500M A0G

P2500M A0G

DIODE GEN PURP 1000V 25A P2500

Taiwan Semiconductor Corporation

3,288 0.00

RFQ

P2500M A0G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 5 µA @ 1000 V - 25A -50°C ~ 175°C 870 mV @ 5 A
P2500MHA0G

P2500MHA0G

DIODE GEN PURP 25A P2500

Taiwan Semiconductor Corporation

2,829 0.00

RFQ

P2500MHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 5 µA @ 1000 V - 25A -50°C ~ 175°C 870 mV @ 5 A
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