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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SF21G A0G

SF21G A0G

DIODE GEN PURP 50V 2A DO204AC

Taiwan Semiconductor Corporation

2,160 0.00

RFQ

SF21G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 2A -55°C ~ 150°C 950 mV @ 2 A
SF21GHA0G

SF21GHA0G

DIODE GEN PURP 50V 2A DO204AC

Taiwan Semiconductor Corporation

3,575 0.00

RFQ

SF21GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 2A -55°C ~ 150°C 950 mV @ 2 A
SF22G A0G

SF22G A0G

DIODE GEN PURP 100V 2A DO204AC

Taiwan Semiconductor Corporation

2,491 0.00

RFQ

SF22G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 2A -55°C ~ 150°C 950 mV @ 2 A
SF22GHA0G

SF22GHA0G

DIODE GEN PURP 100V 2A DO204AC

Taiwan Semiconductor Corporation

3,159 0.00

RFQ

SF22GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 2A -55°C ~ 150°C 950 mV @ 2 A
SF23G A0G

SF23G A0G

DIODE GEN PURP 150V 2A DO204AC

Taiwan Semiconductor Corporation

3,607 0.00

RFQ

SF23G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 2A -55°C ~ 150°C 950 mV @ 2 A
SF23GHA0G

SF23GHA0G

DIODE GEN PURP 150V 2A DO204AC

Taiwan Semiconductor Corporation

2,091 0.00

RFQ

SF23GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 2A -55°C ~ 150°C 950 mV @ 2 A
SF24GHA0G

SF24GHA0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation

3,262 0.00

RFQ

SF24GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
SF25G A0G

SF25G A0G

DIODE GEN PURP 300V 2A DO204AC

Taiwan Semiconductor Corporation

3,162 0.00

RFQ

SF25G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 2A -55°C ~ 150°C 1.3 V @ 2 A
SF25GHA0G

SF25GHA0G

DIODE GEN PURP 300V 2A DO204AC

Taiwan Semiconductor Corporation

2,725 0.00

RFQ

SF25GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 2A -55°C ~ 150°C 1.3 V @ 2 A
SF26GHA0G

SF26GHA0G

DIODE GEN PURP 400V 2A DO204AC

Taiwan Semiconductor Corporation

3,307 0.00

RFQ

SF26GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 400 V 400 V 2A -55°C ~ 150°C 1.3 V @ 2 A
SF27G A0G

SF27G A0G

DIODE GEN PURP 500V 2A DO204AC

Taiwan Semiconductor Corporation

2,315 0.00

RFQ

SF27G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 500 V 500 V 2A -55°C ~ 150°C 1.7 V @ 2 A
SF27GHA0G

SF27GHA0G

DIODE GEN PURP 500V 2A DO204AC

Taiwan Semiconductor Corporation

2,218 0.00

RFQ

SF27GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 500 V 500 V 2A -55°C ~ 150°C 1.7 V @ 2 A
SF28GHA0G

SF28GHA0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

3,306 0.00

RFQ

SF28GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.7 V @ 2 A
SF2L4G A0G

SF2L4G A0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation

2,852 0.00

RFQ

SF2L4G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 1 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
SF2L4GHA0G

SF2L4GHA0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation

2,431 0.00

RFQ

SF2L4GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 1 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
SF2L6G A0G

SF2L6G A0G

DIODE GEN PURP 400V 2A DO204AC

Taiwan Semiconductor Corporation

2,515 0.00

RFQ

SF2L6G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 1 µA @ 400 V 400 V 2A -55°C ~ 150°C 1.3 V @ 2 A
SF2L6GHA0G

SF2L6GHA0G

DIODE GEN PURP 400V 2A DO204AC

Taiwan Semiconductor Corporation

3,904 0.00

RFQ

SF2L6GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 1 µA @ 400 V 400 V 2A -55°C ~ 150°C 1.3 V @ 2 A
SF2L8G A0G

SF2L8G A0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

3,550 0.00

RFQ

SF2L8G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 1 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.7 V @ 2 A
SF2L8GHA0G

SF2L8GHA0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

2,320 0.00

RFQ

SF2L8GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 1 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.7 V @ 2 A
SF31G A0G

SF31G A0G

DIODE GEN PURP 50V 3A DO201AD

Taiwan Semiconductor Corporation

2,125 0.00

RFQ

SF31G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 3A -55°C ~ 150°C 950 mV @ 3 A
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