Chip Start Electronics Co., Limited

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Mfr. Part #	Availability	Quantity	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
MBRF2045 DIODE SCHOTTKY 45V 20A ITO220 Taiwan Semiconductor Corporation	2,876	RFQ	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	200 µA @ 45 V	45 V	20A (DC)	-55°C ~ 150°C	750 mV @ 20 A
SR102H DIODE SCHOTTKY 20V 1A DO-41 Taiwan Semiconductor Corporation	2,541	RFQ	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 20 V	20 V	1A	-55°C ~ 125°C	550 mV @ 1 A
HERAF1007G DIODE GEN PURP 10A 800V IT0-220A Taiwan Semiconductor Corporation	2,394	RFQ	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	80 ns	10 µA @ 800 V	800 V	10A (DC)	-55°C ~ 150°C	1.7 V @ 10 A
MBR1650H DIODE SCHOTTKY 50V 16A TO220 Taiwan Semiconductor Corporation	2,625	RFQ	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 50 V	50 V	16A (DC)	-55°C ~ 150°C	750 mV @ 16 A
GPA805 DIODE GEN PURP 8A 600V TO220AC Taiwan Semiconductor Corporation	2,320	RFQ	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	-	5 µA @ 600 V	600 V	8A (DC)	-55°C ~ 150°C	1.1 V @ 8 A
SR1503 DIODE SCHOTTKY 15A 30V R-6 Taiwan Semiconductor Corporation	2,457	RFQ	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 30 V	30 V	15A (DC)	-55°C ~ 150°C	550 mV @ 15 A
MBRF2060 DIODE SCHOTTKY 60V 20A ITO220 Taiwan Semiconductor Corporation	3,808	RFQ	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	200 µA @ 60 V	60 V	20A (DC)	-55°C ~ 150°C	820 mV @ 20 A
SF33G DIODE GEN PURP 150V 3A DO201AD Taiwan Semiconductor Corporation	2,244	RFQ	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 150 V	150 V	3A (DC)	-55°C ~ 150°C	950 mV @ 3 A
SFAF2004G DIODE GEN PURP 200V 20A ITO220AC Taiwan Semiconductor Corporation	2,368	RFQ	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	170pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	20A (DC)	-55°C ~ 150°C	975 mV @ 20 A
MBR1635H DIODE SCHOTTKY 35V 16A TO220 Taiwan Semiconductor Corporation	2,797	RFQ	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 35 V	35 V	16A (DC)	-55°C ~ 150°C	630 mV @ 16 A
SRA2060 DIODE SCHOTTKY 60V 20A TO220AC Taiwan Semiconductor Corporation	3,836	RFQ	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 60 V	60 V	20A (DC)	-55°C ~ 150°C	700 mV @ 20 A
FR153GH DIODE FAST REC 1.5A 200V DO-15 Taiwan Semiconductor Corporation	2,243	RFQ	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	150 ns	5 µA @ 200 V	200 V	1.5A (DC)	-55°C ~ 150°C	1.3 V @ 1.5 A
SFAF1608GH DIODE GEN PURP 600V 16A ITO220AC Taiwan Semiconductor Corporation	3,814	RFQ	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	10 µA @ 600 V	600 V	16A (DC)	-55°C ~ 150°C	1.7 V @ 16 A
HERAF1004G DIODE GEN PURP 10A 300V IT0-220A Taiwan Semiconductor Corporation	2,277	RFQ	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	50 ns	10 µA @ 300 V	300 V	10A (DC)	-55°C ~ 150°C	1 V @ 10 A
MURF8L60 DIODE GEN PURP 600V 8A ITO220AC Taiwan Semiconductor Corporation	2,943	RFQ	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	65 ns	5 µA @ 600 V	600 V	8A (DC)	-55°C ~ 175°C	1.3 V @ 8 A
SFT12G DIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation	3,417	RFQ	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	1A (DC)	-55°C ~ 150°C	950 mV @ 1 A
HER202G DIODE GEN PURP 2A 100V DO-15 Taiwan Semiconductor Corporation	2,435	RFQ	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	35pF @ 4V, 1MHz	50 ns	5 µA @ 100 V	100 V	2A (DC)	-55°C ~ 150°C	1 V @ 2 A
SF61G DIODE GEN PURP 50V 6A DO201AD Taiwan Semiconductor Corporation	3,505	RFQ	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	6A (DC)	-55°C ~ 150°C	975 mV @ 6 A
SR102 DIODE SCHOTTKY 20V 1A DO-41 Taiwan Semiconductor Corporation	2,684	RFQ	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 20 V	20 V	1A	-55°C ~ 125°C	550 mV @ 1 A
SR103 DIODE SCHOTTKY 30V 1A DO-41 Taiwan Semiconductor Corporation	3,442	RFQ	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 30 V	30 V	1A	-55°C ~ 125°C	550 mV @ 1 A