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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
RS1G M2G

RS1G M2G

DIODE GEN PURP 400V 1A DO214AC

Taiwan Semiconductor Corporation

2,314 0.06

RFQ

RS1G M2G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
RS1J M2G

RS1J M2G

DIODE GEN PURP 600V 1A DO214AC

Taiwan Semiconductor Corporation

2,868 0.06

RFQ

RS1J M2G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.3 V @ 1 A
RS1K M2G

RS1K M2G

DIODE GEN PURP 800V 1A DO214AC

Taiwan Semiconductor Corporation

2,728 0.06

RFQ

RS1K M2G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 500 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.3 V @ 1 A
SFT15G R0G

SFT15G R0G

DIODE GEN PURP 300V 1A TS-1

Taiwan Semiconductor Corporation

3,732 0.10

RFQ

SFT15G R0G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 1A -55°C ~ 150°C 1.3 V @ 1 A
RS1M M2G

RS1M M2G

DIODE GEN PURP 1A DO214AC

Taiwan Semiconductor Corporation

2,397 0.06

RFQ

RS1M M2G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 500 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.3 V @ 1 A
SFT16G R0G

SFT16G R0G

DIODE GEN PURP 400V 1A TS-1

Taiwan Semiconductor Corporation

3,727 0.10

RFQ

SFT16G R0G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 35 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
SFT18G R0G

SFT18G R0G

DIODE GEN PURP 600V 1A TS-1

Taiwan Semiconductor Corporation

2,376 0.10

RFQ

SFT18G R0G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
SD101CW RHG

SD101CW RHG

DIODE SCHOTTKY 40V 15MA SOD123

Taiwan Semiconductor Corporation

2,593 0.06

RFQ

SD101CW RHG

Datasheet

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 2.2pF @ 0V, 1MHz 1 ns 200 nA @ 40 V 40 V 15mA (DC) -65°C ~ 125°C 900 mV @ 15 mA
SD103AW RHG

SD103AW RHG

DIODE SCHOTTKY 40V 350MA SOD123

Taiwan Semiconductor Corporation

3,667 0.06

RFQ

SD103AW RHG

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 50pF @ 0V, 1MHz - 5 µA @ 40 V 40 V 350mA 125°C (Max) 600 mV @ 200 mA
SF14GHR0G

SF14GHR0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

3,767 0.10

RFQ

SF14GHR0G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 950 mV @ 1 A
SD103BW RHG

SD103BW RHG

DIODE SCHOTTKY 30V 350MA SOD123

Taiwan Semiconductor Corporation

3,311 0.06

RFQ

SD103BW RHG

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 50pF @ 0V, 1MHz - 5 µA @ 30 V 30 V 350mA 125°C (Max) 600 mV @ 200 mA
SD103CW RHG

SD103CW RHG

DIODE SCHOTTKY 20V 350MA SOD123

Taiwan Semiconductor Corporation

3,530 0.06

RFQ

SD103CW RHG

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 50pF @ 0V, 1MHz - 5 µA @ 20 V 20 V 350mA 125°C (Max) 600 mV @ 200 mA
S3DB M4G

S3DB M4G

DIODE GEN PURP 200V 3A DO214AA

Taiwan Semiconductor Corporation

3,845 0.10

RFQ

S3DB M4G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 40pF @ 4V, 1MHz 1.5 µs 10 µA @ 200 V 200 V 3A -55°C ~ 150°C 1.15 V @ 3 A
S3GB M4G

S3GB M4G

DIODE GEN PURP 400V 3A DO214AA

Taiwan Semiconductor Corporation

2,543 0.10

RFQ

S3GB M4G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 40pF @ 4V, 1MHz 1.5 µs 10 µA @ 400 V 400 V 3A -55°C ~ 150°C 1.15 V @ 3 A
S3JB M4G

S3JB M4G

DIODE GEN PURP 600V 3A DO214AA

Taiwan Semiconductor Corporation

3,587 0.10

RFQ

S3JB M4G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 40pF @ 4V, 1MHz 1.5 µs 10 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.15 V @ 3 A
S3KB M4G

S3KB M4G

DIODE GEN PURP 800V 3A DO214AA

Taiwan Semiconductor Corporation

3,308 0.10

RFQ

S3KB M4G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 40pF @ 4V, 1MHz 1.5 µs 10 µA @ 800 V 800 V 3A -55°C ~ 150°C 1.15 V @ 3 A
S3MB M4G

S3MB M4G

DIODE GEN PURP 3A DO214AA

Taiwan Semiconductor Corporation

2,068 0.10

RFQ

S3MB M4G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 40pF @ 4V, 1MHz 1.5 µs 10 µA @ 1000 V - 3A -55°C ~ 150°C 1.15 V @ 3 A
SF2L6G R0G

SF2L6G R0G

DIODE GEN PURP 400V 2A DO204AC

Taiwan Semiconductor Corporation

2,534 0.10

RFQ

SF2L6G R0G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 1 µA @ 400 V 400 V 2A -55°C ~ 150°C 1.3 V @ 2 A
ES2DHM4G

ES2DHM4G

DIODE GEN PURP 200V 2A DO214AA

Taiwan Semiconductor Corporation

2,543 0.15

RFQ

ES2DHM4G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 25pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
S2BA M2G

S2BA M2G

DIODE GEN PURP 100V 1.5A DO214AC

Taiwan Semiconductor Corporation

3,710 0.06

RFQ

S2BA M2G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 30pF @ 4V, 1MHz 1.5 µs 5 µA @ 100 V 100 V 1.5A -55°C ~ 150°C 1.1 V @ 1.5 A
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