Chip Start Electronics Co., Limited

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Packaging	Series	ProductStatus	FETType	Technology	DraintoSourceVoltage(Vdss)	Current-ContinuousDrain(Id)@25°C	DriveVoltage(MaxRdsOnMinRdsOn)	RdsOn(Max)@IdVgs	Vgs(th)(Max)@Id	GateCharge(Qg)(Max)@Vgs	Vgs(Max)	InputCapacitance(Ciss)(Max)@Vds	FETFeature	PowerDissipation(Max)	OperatingTemperature	MountingType
IRFZ34NPBF MOSFET N-CH 55V 29A TO220AB Infineon Technologies	6,690	1.09	RFQ	Datasheet	Tube	HEXFET®	Active	N-Channel	MOSFET (Metal Oxide)	55 V	29A (Tc)	10V	40mOhm @ 16A, 10V	4V @ 250µA	34 nC @ 10 V	±20V	700 pF @ 25 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
IRF630NPBF MOSFET N-CH 200V 9.3A TO220AB Infineon Technologies	12,714	1.10	RFQ	Datasheet	Tube	HEXFET®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	9.3A (Tc)	10V	300mOhm @ 5.4A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	575 pF @ 25 V	-	82W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
IRFU220NPBF MOSFET N-CH 200V 5A IPAK Infineon Technologies	6,792	1.12	RFQ	Datasheet	Tube	HEXFET®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	200 V	5A (Tc)	10V	600mOhm @ 2.9A, 10V	4V @ 250µA	23 nC @ 10 V	±20V	300 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
BSO301SPHXUMA1 MOSFET P-CH 30V 12.6A 8DSO Infineon Technologies	1,132	2.29	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	OptiMOS™	Active	P-Channel	MOSFET (Metal Oxide)	30 V	12.6A (Ta)	4.5V, 10V	8mOhm @ 14.9A, 10V	2V @ 250µA	136 nC @ 10 V	±20V	5890 pF @ 25 V	-	1.79W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount
IRFH5215TRPBF MOSFET N-CH 150V 5A/27A PQFN Infineon Technologies	6,232	2.30	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	HEXFET®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	5A (Ta), 27A (Tc)	10V	58mOhm @ 16A, 10V	5V @ 100µA	32 nC @ 10 V	±20V	1350 pF @ 50 V	-	3.6W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
IRF6668TRPBF MOSFET N-CH 80V 55A DIRECTFET MZ Infineon Technologies	31,000	2.32	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	HEXFET®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	55A (Tc)	10V	15mOhm @ 12A, 10V	4.9V @ 100µA	31 nC @ 10 V	±20V	1320 pF @ 25 V	-	2.8W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)	Surface Mount
IRF1010ESTRLPBF MOSFET N-CH 60V 84A D2PAK Infineon Technologies	2,886	1.93	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	HEXFET®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	84A (Tc)	10V	12mOhm @ 50A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	3210 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
IRFZ44ZPBF MOSFET N-CH 55V 51A TO220AB Infineon Technologies	3,236	1.17	RFQ	Datasheet	Tube	HEXFET®	Active	N-Channel	MOSFET (Metal Oxide)	55 V	51A (Tc)	10V	13.9mOhm @ 31A, 10V	4V @ 250µA	43 nC @ 10 V	±20V	1420 pF @ 25 V	-	80W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
AUIRLR120NTRL MOSFET N-CH 100V 10A DPAK Infineon Technologies	7,601	2.48	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	HEXFET®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	10A (Tc)	4V, 10V	185mOhm @ 6A, 10V	2V @ 250µA	20 nC @ 5 V	±16V	440 pF @ 25 V	-	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
IRF520NPBF MOSFET N-CH 100V 9.7A TO220AB Infineon Technologies	3,947	1.23	RFQ	Datasheet	Tube	HEXFET®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	9.7A (Tc)	10V	200mOhm @ 5.7A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	330 pF @ 25 V	-	48W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
IRLU3410PBF MOSFET N-CH 100V 17A IPAK Infineon Technologies	10,589	1.26	RFQ	Datasheet	Tube	HEXFET®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	17A (Tc)	4V, 10V	105mOhm @ 10A, 10V	2V @ 250µA	34 nC @ 5 V	±16V	800 pF @ 25 V	-	79W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
IRFU5305PBF MOSFET P-CH 55V 31A IPAK Infineon Technologies	7,950	1.26	RFQ	Datasheet	Tube	HEXFET®	Active	P-Channel	MOSFET (Metal Oxide)	55 V	31A (Tc)	10V	65mOhm @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1200 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
IRF1010NSTRLPBF MOSFET N-CH 55V 85A D2PAK Infineon Technologies	8,080	2.16	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	HEXFET®	Active	N-Channel	MOSFET (Metal Oxide)	55 V	85A (Tc)	10V	11mOhm @ 43A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	3210 pF @ 25 V	-	180W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
SPD08N50C3ATMA1 MOSFET N-CH 500V 7.6A TO252-3 Infineon Technologies	1,941	2.61	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	CoolMOS™	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	500 V	7.6A (Tc)	10V	600mOhm @ 4.6A, 10V	3.9V @ 350µA	32 nC @ 10 V	±20V	750 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
ISC012N04NM6ATMA1 TRENCH <= 40V PG-TDSON-8 Infineon Technologies	8,387	2.66	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	OptiMOS™	Active	N-Channel	MOSFET (Metal Oxide)	40 V	36A (Ta), 232A (Tc)	6V, 10V	1.2mOhm @ 50A, 10V	2.8V @ 747µA	64 nC @ 10 V	±20V	4600 pF @ 20 V	-	3W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
IRFB3806PBF MOSFET N-CH 60V 43A TO220AB Infineon Technologies	1,890	1.33	RFQ	Datasheet	Tube	HEXFET®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	43A (Tc)	10V	15.8mOhm @ 25A, 10V	4V @ 50µA	30 nC @ 10 V	±20V	1150 pF @ 50 V	-	71W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
IRFIZ24NPBF MOSFET N-CH 55V 14A TO220AB FP Infineon Technologies	8,601	1.44	RFQ	Datasheet	Tube	HEXFET®	Active	N-Channel	MOSFET (Metal Oxide)	55 V	14A (Tc)	10V	70mOhm @ 7.8A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	370 pF @ 25 V	-	29W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
BSC0805LSATMA1 MOSFET N-CH 100V 79A TDSON-8-6 Infineon Technologies	4,062	2.73	RFQ	Datasheet	Cut Tape (CT)	OptiMOS™ 5	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	100 V	79A (Tc)	4.5V, 10V	7mOhm @ 40A, 10V	2.3V @ 49µA	20 nC @ 4.5 V	±20V	2700 pF @ 50 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
BSZ010NE2LS5ATMA1 MOSFET N-CH 25V 32A/40A TSDSON Infineon Technologies	6,836	2.79	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	OptiMOS™ 5	Active	N-Channel	MOSFET (Metal Oxide)	25 V	32A (Ta), 40A (Tc)	4.5V, 10V	1mOhm @ 20A, 10V	2V @ 250µA	29 nC @ 4.5 V	±16V	3900 pF @ 12 V	-	2.1W (Ta), 69W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
IRFB7546PBF MOSFET N-CH 60V 75A TO220AB Infineon Technologies	5,222	1.37	RFQ	Datasheet	Tube	HEXFET®, StrongIRFET™	Active	N-Channel	MOSFET (Metal Oxide)	60 V	75A (Tc)	6V, 10V	7.3mOhm @ 45A, 10V	3.7V @ 100µA	87 nC @ 10 V	±20V	3000 pF @ 25 V	-	99W (Tc)	-55°C ~ 175°C (TJ)	Through Hole