Chip Start Electronics Co., Limited

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Packaging	Series	ProductStatus	FETType	Technology	DraintoSourceVoltage(Vdss)	Current-ContinuousDrain(Id)@25°C	DriveVoltage(MaxRdsOnMinRdsOn)	RdsOn(Max)@IdVgs	Vgs(th)(Max)@Id	GateCharge(Qg)(Max)@Vgs	Vgs(Max)	InputCapacitance(Ciss)(Max)@Vds	FETFeature	PowerDissipation(Max)	OperatingTemperature	MountingType
TK100E08N1,S1X MOSFET N-CH 80V 100A TO220 Toshiba Semiconductor and Storage	2,998	3.79	RFQ	Datasheet	Tube	U-MOSVIII-H	Active	N-Channel	MOSFET (Metal Oxide)	80 V	100A (Ta)	10V	3.2mOhm @ 50A, 10V	4V @ 1mA	130 nC @ 10 V	±20V	9000 pF @ 40 V	-	255W (Tc)	150°C (TJ)	Through Hole
TK16J60W5,S1VQ X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	2,758	4.96	RFQ	Datasheet	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	600 V	15.8A (Ta)	10V	230mOhm @ 7.9A, 10V	4.5V @ 790µA	43 nC @ 10 V	±30V	1350 pF @ 300 V	-	130W (Tc)	150°C	Through Hole
TK20J60W,S1VE X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	2,289	5.10	RFQ	Datasheet	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Ta)	10V	155mOhm @ 10A, 10V	3.7V @ 1mA	48 nC @ 10 V	±30V	1680 pF @ 300 V	-	165W (Tc)	150°C	Through Hole
TK28N65W5,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	2,719	6.35	RFQ	Datasheet	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	650 V	27.6A (Ta)	10V	130mOhm @ 13.8A, 10V	4.5V @ 1.6mA	90 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C	Through Hole
TK065N65Z,S1F MOSFET N-CH 650V 38A TO247 Toshiba Semiconductor and Storage	3,205	6.81	RFQ	Datasheet	Tube	DTMOSVI	Active	N-Channel	MOSFET (Metal Oxide)	650 V	38A (Ta)	10V	65mOhm @ 19A, 10V	4V @ 1.69mA	62 nC @ 10 V	±30V	3650 pF @ 300 V	-	270W (Tc)	150°C	Through Hole
TK49N65W5,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	2,442	11.26	RFQ	Datasheet	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	650 V	49.2A (Ta)	10V	57mOhm @ 24.6A, 10V	4.5V @ 2.5mA	185 nC @ 10 V	±30V	6500 pF @ 300 V	-	400W (Tc)	150°C	Through Hole
TK39J60W5,S1VQ MOSFET N-CH 600V 38.8A TO3P Toshiba Semiconductor and Storage	2,908	11.57	RFQ	Datasheet	Tube	DTMOSIV	Active	N-Channel	MOSFET (Metal Oxide)	600 V	38.8A (Ta)	10V	65mOhm @ 19.4A, 10V	3.7V @ 1.9mA	135 nC @ 10 V	±30V	4100 pF @ 300 V	Super Junction	270W (Tc)	150°C (TJ)	Through Hole
TK62N60W,S1VF MOSFET N-CH 600V 61.8A TO247 Toshiba Semiconductor and Storage	3,388	15.62	RFQ	Datasheet	Tube	DTMOSIV	Active	N-Channel	MOSFET (Metal Oxide)	600 V	61.8A (Ta)	10V	40mOhm @ 30.9A, 10V	3.7V @ 3.1mA	180 nC @ 10 V	±30V	6500 pF @ 300 V	Super Junction	400W (Tc)	150°C (TJ)	Through Hole
TK6A80E,S4X MOSFET N-CH 800V 6A TO220SIS Toshiba Semiconductor and Storage	2,678	1.98	RFQ	Datasheet	Tube	π-MOSVIII	Active	N-Channel	MOSFET (Metal Oxide)	800 V	6A (Ta)	10V	1.7Ohm @ 3A, 10V	4V @ 600µA	32 nC @ 10 V	±30V	1350 pF @ 25 V	-	45W (Tc)	150°C (TJ)	Through Hole
TK56A12N1,S4X MOSFET N-CH 120V 56A TO220SIS Toshiba Semiconductor and Storage	2,258	2.19	RFQ	Datasheet	Tube	U-MOSVIII-H	Active	N-Channel	MOSFET (Metal Oxide)	120 V	56A (Tc)	10V	7.5mOhm @ 28A, 10V	4V @ 1mA	69 nC @ 10 V	±20V	4200 pF @ 60 V	-	45W (Tc)	150°C (TJ)	Through Hole
TK65A10N1,S4X MOSFET N-CH 100V 65A TO220SIS Toshiba Semiconductor and Storage	3,274	2.93	RFQ	Datasheet	Tube	U-MOSVIII-H	Active	N-Channel	MOSFET (Metal Oxide)	100 V	65A (Tc)	10V	4.8mOhm @ 32.5A, 10V	4V @ 1mA	81 nC @ 10 V	±20V	5400 pF @ 50 V	-	45W (Tc)	150°C (TJ)	Through Hole
TK28A65W,S5X MOSFET N-CH 650V 27.6A TO220SIS Toshiba Semiconductor and Storage	2,582	5.25	RFQ	Datasheet	Tube	DTMOSIV	Active	N-Channel	MOSFET (Metal Oxide)	650 V	27.6A (Ta)	10V	110mOhm @ 13.8A, 10V	3.5V @ 1.6mA	75 nC @ 10 V	±30V	3000 pF @ 300 V	-	45W (Tc)	150°C (TJ)	Through Hole
TK31Z60X,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	2,553	11.83	RFQ	Datasheet	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C	Through Hole
TK62Z60X,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	2,802	16.63	RFQ	Datasheet	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	600 V	61.8A (Ta)	10V	40mOhm @ 21A, 10V	3.5V @ 3.1mA	135 nC @ 10 V	±30V	6500 pF @ 300 V	-	400W (Tc)	150°C	Through Hole
TK7R0E08QM,S1X UMOS10 TO-220AB 80V 7MOHM Toshiba Semiconductor and Storage	212	1.38	RFQ	Datasheet	Tube	U-MOSX-H	Active	N-Channel	MOSFET (Metal Oxide)	80 V	64A (Tc)	6V, 10V	7mOhm @ 32A, 10V	3.5V @ 500µA	39 nC @ 10 V	±20V	2700 pF @ 40 V	-	87W (Tc)	175°C	Through Hole
TK5R1A08QM,S4X UMOS10 TO-220SIS 80V 5.1MOHM Toshiba Semiconductor and Storage	2,518	1.67	RFQ	Datasheet	Tube	U-MOSX-H	Active	N-Channel	MOSFET (Metal Oxide)	80 V	70A (Tc)	6V, 10V	5.1mOhm @ 35A, 10V	3.5V @ 700µA	54 nC @ 10 V	±20V	3980 pF @ 40 V	-	45W (Tc)	175°C	Through Hole
TK3R3E08QM,S1X UMOS10 TO-220AB 80V 3.3MOHM Toshiba Semiconductor and Storage	3,433	2.24	RFQ	Datasheet	Tube	U-MOSX-H	Active	N-Channel	MOSFET (Metal Oxide)	80 V	120A (Tc)	6V, 10V	3.3mOhm @ 50A, 10V	3.5V @ 1.3mA	110 nC @ 10 V	±20V	7670 pF @ 40 V	-	230W (Tc)	175°C	Through Hole
TK190E65Z,S1X 650V DTMOS VI TO-220 190MOHM Toshiba Semiconductor and Storage	200	2.92	RFQ	Datasheet	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	650 V	15A (Ta)	10V	190mOhm @ 7.5A, 10V	4V @ 610µA	25 nC @ 10 V	±30V	1370 pF @ 300 V	-	130W (Tc)	150°C	Through Hole
TK190A65Z,S4X MOSFET N-CH 650V 15A TO220SIS Toshiba Semiconductor and Storage	175	3.15	RFQ	Datasheet	Tube	DTMOSVI	Active	N-Channel	MOSFET (Metal Oxide)	650 V	15A (Ta)	10V	190mOhm @ 7.5A, 10V	4V @ 610µA	25 nC @ 10 V	±30V	1370 pF @ 300 V	-	40W (Tc)	150°C	Through Hole
TK155A65Z,S4X MOSFET N-CH 650V 18A TO220SIS Toshiba Semiconductor and Storage	2,633	3.29	RFQ	Datasheet	Tube	DTMOSVI	Active	N-Channel	MOSFET (Metal Oxide)	650 V	18A (Ta)	10V	155mOhm @ 9A, 10V	4V @ 730µA	29 nC @ 10 V	±30V	1635 pF @ 300 V	-	40W (Tc)	150°C	Through Hole