Chip Start Electronics Co., Limited

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Packaging	Series	ProductStatus	FETType	Technology	DraintoSourceVoltage(Vdss)	Current-ContinuousDrain(Id)@25°C	DriveVoltage(MaxRdsOnMinRdsOn)	RdsOn(Max)@IdVgs	Vgs(th)(Max)@Id	GateCharge(Qg)(Max)@Vgs	Vgs(Max)	InputCapacitance(Ciss)(Max)@Vds	FETFeature	PowerDissipation(Max)	OperatingTemperature	MountingType
SSM6K781G,LF MOSFET N-CH 12V 7A 6WCSP6C Toshiba Semiconductor and Storage	500	0.19	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	U-MOSVII-H	Active	N-Channel	MOSFET (Metal Oxide)	12 V	7A (Ta)	1.5V, 4.5V	18mOhm @ 1.5A, 4.5V	1V @ 250µA	5.4 nC @ 4.5 V	±8V	600 pF @ 6 V	-	1.6W (Ta)	150°C (TJ)	Surface Mount
TW048N65C,S1F G3 650V SIC-MOSFET TO-247 48MOH Toshiba Semiconductor and Storage	2,174	17.09	RFQ	Datasheet	Tube	-	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	40A (Tc)	18V	65mOhm @ 20A, 18V	5V @ 1.6mA	41 nC @ 18 V	+25V, -10V	1362 pF @ 400 V	-	132W (Tc)	175°C	Through Hole
SSM3J15FS,LF MOSFET P-CH 30V 100MA SSM Toshiba Semiconductor and Storage	413	0.26	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	-	Active	P-Channel	MOSFET (Metal Oxide)	30 V	100mA (Ta)	2.5V, 4V	12Ohm @ 10mA, 4V	1.7V @ 100µA	-	±20V	9.1 pF @ 3 V	-	100mW (Ta)	150°C	Surface Mount
SSM3K56FS,LF MOSFET N-CH 20V 800MA SSM Toshiba Semiconductor and Storage	749,990	0.39	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	U-MOSVII-H	Active	N-Channel	MOSFET (Metal Oxide)	20 V	800mA (Ta)	1.5V, 4.5V	235mOhm @ 800mA, 4.5V	1V @ 1mA	1 nC @ 4.5 V	±8V	55 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	Surface Mount
SSM6K504NU,LF MOSFET N-CH 30V 9A 6UDFNB Toshiba Semiconductor and Storage	2,075	0.39	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	U-MOSVII	Active	N-Channel	MOSFET (Metal Oxide)	30 V	9A (Ta)	4.5V, 10V	19.5mOhm @ 4A, 10V	2.5V @ 100µA	4.8 nC @ 4.5 V	±20V	620 pF @ 15 V	-	1.25W (Ta)	150°C (TJ)	Surface Mount
SSM3K59CTB,L3F MOSFET N-CH 40V 2A CST3B Toshiba Semiconductor and Storage	591	0.40	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	U-MOSVII-H	Active	N-Channel	MOSFET (Metal Oxide)	40 V	2A (Ta)	1.8V, 8V	215mOhm @ 1A, 8V	1.2V @ 1mA	1.1 nC @ 4.2 V	±12V	130 pF @ 10 V	-	1W (Ta)	150°C (TJ)	Surface Mount
SSM3J36FS,LF MOSFET P-CH 20V 330MA SSM Toshiba Semiconductor and Storage	63,173	0.30	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	U-MOSIII	Active	P-Channel	MOSFET (Metal Oxide)	20 V	330mA (Ta)	1.5V, 4.5V	1.31Ohm @ 100mA, 4.5V	1V @ 1mA	1.2 nC @ 4 V	±8V	43 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	Surface Mount
SSM3J118TU(TE85L) MOSFET P-CH 30V 1.4A UFM Toshiba Semiconductor and Storage	455	0.41	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	U-MOSII	Active	P-Channel	MOSFET (Metal Oxide)	30 V	1.4A (Ta)	4V, 10V	240mOhm @ 650mA, 10V	-	-	±20V	137 pF @ 15 V	-	500mW (Ta)	150°C (TJ)	Surface Mount
SSM6K518NU,LF MOSFET N-CH 20V 6A 6UDFNB Toshiba Semiconductor and Storage	324	0.43	RFQ		Tape & Reel (TR),Cut Tape (CT)	-	Active	N-Channel	MOSFET (Metal Oxide)	20 V	6A (Ta)	1.5V, 4.5V	33mOhm @ 4A, 4.5V	1V @ 1mA	3.6 nC @ 4.5 V	±8V	410 pF @ 10 V	-	1.25W (Ta)	150°C	Surface Mount
SSM6K517NU,LF MOSFET N-CH 30V 6A 6UDFNB Toshiba Semiconductor and Storage	219	0.43	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	-	Active	N-Channel	MOSFET (Metal Oxide)	30 V	6A (Ta)	1.8V, 4.5V	39.1mOhm @ 2A, 4.5V	1V @ 1mA	3.2 nC @ 4.5 V	+12V, -8V	310 pF @ 15 V	-	1.25W (Ta)	150°C	Surface Mount
SSM3J114TU(TE85L) MOSFET P-CH 20V 1.8A UFM Toshiba Semiconductor and Storage	293	0.44	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	1.8A (Ta)	1.5V, 4V	149mOhm @ 600mA, 4V	1V @ 1mA	7.7 nC @ 4 V	±8V	331 pF @ 10 V	-	500mW (Ta)	150°C (TJ)	Surface Mount
SSM3K341TU,LF MOSFET N-CH 60V 6A UFM Toshiba Semiconductor and Storage	3,388	0.46	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	U-MOSVIII-H	Active	N-Channel	MOSFET (Metal Oxide)	60 V	6A (Ta)	4V, 10V	36mOhm @ 4A, 10V	2.5V @ 100µA	9.3 nC @ 10 V	±20V	550 pF @ 10 V	-	1.8W (Ta)	175°C	Surface Mount
SSM6J402TU,LF MOSFET P-CH 30V 2A UF6 Toshiba Semiconductor and Storage	230	0.51	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	-	Active	P-Channel	MOSFET (Metal Oxide)	30 V	2A (Ta)	4V, 10V	117mOhm @ 1A, 10V	2.6V @ 1mA	5.3 nC @ 10 V	±20V	280 pF @ 15 V	-	500mW (Ta)	150°C	Surface Mount
SSM3J140TU,LXHF SMOS P-CH VDSS:-20V VGSS:-8/+6V Toshiba Semiconductor and Storage	408	0.58	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101, U-MOSVI	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4.4A (Ta)	1.5V, 4.5V	25.8mOhm @ 4A, 4.5V	1V @ 1mA	24.8 nC @ 4.5 V	+6V, -8V	1800 pF @ 10 V	-	500mW (Ta)	150°C	Surface Mount
TPH8R903NL,LQ MOSFET N CH 30V 20A 8SOP Toshiba Semiconductor and Storage	556	0.80	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	U-MOSVIII-H	Active	N-Channel	MOSFET (Metal Oxide)	30 V	20A (Tc)	10V	8.9mOhm @ 10A, 10V	2.3V @ 1mA	9.8 nC @ 10 V	±20V	820 pF @ 15 V	-	1.6W (Ta), 24W (Tc)	150°C (TJ)	Surface Mount
TPN4R712MD,L1Q MOSFET P-CH 20V 36A 8TSON Toshiba Semiconductor and Storage	202	0.80	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	U-MOSVI	Active	P-Channel	MOSFET (Metal Oxide)	20 V	36A (Tc)	2.5V, 4.5V	4.7mOhm @ 18A, 4.5V	1.2V @ 1mA	65 nC @ 5 V	±12V	4300 pF @ 10 V	-	42W (Tc)	150°C (TJ)	Surface Mount
TK7S10N1Z,LQ MOSFET N-CH 100V 7A DPAK Toshiba Semiconductor and Storage	634	1.42	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	U-MOSVIII-H	Active	N-Channel	MOSFET (Metal Oxide)	100 V	7A (Ta)	10V	48mOhm @ 3.5A, 10V	4V @ 100µA	7.1 nC @ 10 V	±20V	470 pF @ 10 V	-	50W (Tc)	175°C (TJ)	Surface Mount
TK560P65Y,RQ MOSFET N-CHANNEL 650V 7A DPAK Toshiba Semiconductor and Storage	510	1.27	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	DTMOSV	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7A (Tc)	10V	560mOhm @ 3.5A, 10V	4V @ 240µA	14.5 nC @ 10 V	±30V	380 pF @ 300 V	-	60W (Tc)	150°C (TJ)	Surface Mount
TK7P65W,RQ MOSFET N-CH 650V 6.8A DPAK Toshiba Semiconductor and Storage	467	1.73	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	DTMOSIV	Active	N-Channel	MOSFET (Metal Oxide)	650 V	6.8A (Ta)	10V	800mOhm @ 3.4A, 10V	3.5V @ 250µA	15 nC @ 10 V	±30V	490 pF @ 300 V	-	60W (Tc)	150°C (TJ)	Surface Mount
TK14G65W,RQ MOSFET N-CH 650V 13.7A D2PAK Toshiba Semiconductor and Storage	827	2.34	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	DTMOSIV	Active	N-Channel	MOSFET (Metal Oxide)	650 V	13.7A (Ta)	10V	250mOhm @ 6.9A, 10V	3.5V @ 690µA	35 nC @ 10 V	±30V	1300 pF @ 300 V	-	130W (Tc)	150°C (TJ)	Surface Mount