Chip Start Electronics Co., Limited

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Packaging	Series	ProductStatus	FETType	Technology	DraintoSourceVoltage(Vdss)	Current-ContinuousDrain(Id)@25°C	DriveVoltage(MaxRdsOnMinRdsOn)	RdsOn(Max)@IdVgs	Vgs(th)(Max)@Id	GateCharge(Qg)(Max)@Vgs	Vgs(Max)	InputCapacitance(Ciss)(Max)@Vds	FETFeature	PowerDissipation(Max)	OperatingTemperature	MountingType
R6047ENZ4C13 MOSFET N-CH 600V 47A TO247 Rohm Semiconductor	3,692	15.25	RFQ	Datasheet	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	600 V	47A (Tc)	10V	72mOhm @ 25.8A, 10V	4V @ 1mA	145 nC @ 10 V	±20V	3850 pF @ 25 V	-	481W (Tc)	150°C (TJ)	Through Hole
SCT4045DRC15 750V, 45M, 4-PIN THD, TRENCH-STR Rohm Semiconductor	2,389	15.41	RFQ	Datasheet	Tube	-	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	34A (Tc)	18V	59mOhm @ 17A, 18V	4.8V @ 8.89mA	63 nC @ 18 V	+21V, -4V	1460 pF @ 500 V	-	115W	175°C (TJ)	Through Hole
SCT4045DEC11 750V, 45M, 3-PIN THD, TRENCH-STR Rohm Semiconductor	3,022	15.41	RFQ	Datasheet	Tube	-	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	34A (Tc)	18V	59mOhm @ 17A, 18V	4.8V @ 8.89mA	63 nC @ 18 V	+21V, -4V	14600 pF @ 500 V	-	115W	175°C (TJ)	Through Hole
SCT2280KEHRC11 1200V, 14A, THD, SILICON-CARBIDE Rohm Semiconductor	3,945	15.73	RFQ	Datasheet	Tube	Automotive, AEC-Q101	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	14A (Tc)	18V	364mOhm @ 4A, 18V	4V @ 1.4mA	36 nC @ 400 V	+22V, -6V	667 pF @ 800 V	-	108W (Tc)	175°C (TJ)	Through Hole
SCT4062KRC15 1200V, 62M, 4-PIN THD, TRENCH-ST Rohm Semiconductor	2,656	15.82	RFQ	Datasheet	Tube	-	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	26A (Tc)	18V	81mOhm @ 12A, 18V	4.8V @ 6.45mA	64 nC @ 18 V	+21V, -4V	1498 pF @ 800 V	-	115W	175°C (TJ)	Through Hole
SCT4062KEC11 1200V, 62M, 3-PIN THD, TRENCH-ST Rohm Semiconductor	3,446	15.82	RFQ	Datasheet	Tube	-	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	26A (Tc)	18V	81mOhm @ 12A, 18V	4.8V @ 6.45mA	64 nC @ 18 V	+21V, -4V	1498 pF @ 800 V	-	115W	175°C (TJ)	Through Hole
SCT4045DRHRC15 750V, 34A, 4-PIN THD, TRENCH-STR Rohm Semiconductor	3,263	15.87	RFQ	Datasheet	Tube	Automotive, AEC-Q101	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	750 V	34A (Tc)	18V	59mOhm @ 17A, 18V	4.8V @ 8.89mA	63 nC @ 18 V	+21V, -4V	1460 pF @ 500 V	-	115W	175°C (TJ)	Through Hole
SCT4045DEHRC11 750V, 34A, 3-PIN THD, TRENCH-STR Rohm Semiconductor	3,976	15.87	RFQ	Datasheet	Tube	Automotive, AEC-Q101	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	750 V	34A (Tc)	18V	59mOhm @ 17A, 18V	4.8V @ 8.89mA	63 nC @ 18 V	+21V, -4V	1460 pF @ 500 V	-	115W	175°C (TJ)	Through Hole
SCT4026DW7HRTL 750V, 51A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor	2,535	23.84	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	750 V	51A (Tc)	18V	34mOhm @ 29A, 18V	4.8V @ 15.4mA	94 nC @ 18 V	+21V, -4V	2320 pF @ 500 V	-	150W	175°C (TJ)	Surface Mount
SCT4036KW7HRTL 1200V, 40A, 7-PIN SMD, TRENCH-ST Rohm Semiconductor	2,670	24.23	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	40A (Tc)	18V	47mOhm @ 21A, 18V	4.8V @ 11.1mA	91 nC @ 18 V	+21V, -4V	2335 pF @ 800 V	-	150W	175°C (TJ)	Surface Mount
SCT2160KEGC11 1200V, 22A, THD, SILICON-CARBIDE Rohm Semiconductor	3,799	21.54	RFQ	Datasheet	Tube	-	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	22A (Tc)	18V	208mOhm @ 7A, 18V	4V @ 2.5mA	62 nC @ 18 V	+22V, -6V	1200 pF @ 800 V	-	165W (Tc)	175°C (TJ)	Through Hole
SCT2160KEHRC11 1200V, 22A, THD, SILICON-CARBIDE Rohm Semiconductor	2,415	22.76	RFQ	Datasheet	Tube	Automotive, AEC-Q101	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	22A (Tc)	18V	208mOhm @ 7A, 18V	4V @ 2.5mA	62 nC @ 18 V	+22V, -6V	1200 pF @ 800 V	-	165W (Tc)	175°C (TJ)	Through Hole
SCT4026DRC15 750V, 26M, 4-PIN THD, TRENCH-STR Rohm Semiconductor	3,686	23.15	RFQ	Datasheet	Tube	-	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	56A (Tc)	18V	34mOhm @ 29A, 18V	4.8V @ 15.4mA	94 nC @ 18 V	+21V, -4V	2320 pF @ 500 V	-	176W	175°C (TJ)	Through Hole
SCT4026DEC11 750V, 26M, 3-PIN THD, TRENCH-STR Rohm Semiconductor	3,070	23.15	RFQ	Datasheet	Tube	-	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	56A (Tc)	18V	34mOhm @ 29A, 18V	4.8V @ 15.4mA	94 nC @ 18 V	+21V, -4V	2320 pF @ 500 V	-	176W	175°C (TJ)	Through Hole
SCT4036KEC11 1200V, 36M, 3-PIN THD, TRENCH-ST Rohm Semiconductor	2,262	23.52	RFQ	Datasheet	Tube	-	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	43A (Tc)	18V	47mOhm @ 21A, 18V	4.8V @ 11.1mA	91 nC @ 18 V	+21V, -4V	2335 pF @ 800 V	-	176W	175°C (TJ)	Through Hole
SCT4036KRC15 1200V, 36M, 4-PIN THD, TRENCH-ST Rohm Semiconductor	2,425	23.52	RFQ	Datasheet	Tube	-	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	43A (Tc)	18V	47mOhm @ 21A, 18V	4.8V @ 11.1mA	91 nC @ 18 V	+21V, -4V	2335 pF @ 800 V	-	176W	175°C (TJ)	Through Hole
SCT4026DEHRC11 750V, 56A, 3-PIN THD, TRENCH-STR Rohm Semiconductor	3,425	23.84	RFQ	Datasheet	Tube	Automotive, AEC-Q101	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	750 V	56A (Tc)	18V	34mOhm @ 29A, 18V	4.8V @ 15.4mA	94 nC @ 18 V	+21V, -4V	2320 pF @ 500 V	-	176W	175°C (TJ)	Through Hole
SCT4026DRHRC15 750V, 56A, 4-PIN THD, TRENCH-STR Rohm Semiconductor	3,103	23.84	RFQ	Datasheet	Tube	Automotive, AEC-Q101	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	750 V	56A (Tc)	18V	34mOhm @ 29A, 18V	4.8V @ 15.4mA	94 nC @ 18 V	+21V, -4V	2320 pF @ 500 V	-	176W	175°C (TJ)	Through Hole
SCT4036KEHRC11 1200V, 43A, 3-PIN THD, TRENCH-ST Rohm Semiconductor	2,897	24.23	RFQ	Datasheet	Tube	Automotive, AEC-Q101	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	43A (Tc)	18V	47mOhm @ 21A, 18V	4.8V @ 11.1mA	91 nC @ 18 V	+21V, -4V	2335 pF @ 800 V	-	176W	175°C (TJ)	Through Hole
SCT4036KRHRC15 1200V, 43A, 4-PIN THD, TRENCH-ST Rohm Semiconductor	2,760	24.23	RFQ	Datasheet	Tube	Automotive, AEC-Q101	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	43A (Tc)	18V	47mOhm @ 21A, 18V	4.8V @ 11.1mA	91 nC @ 18 V	+21V, -4V	2335 pF @ 800 V	-	176W	175°C (TJ)	Through Hole