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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
R6511END3TL1

R6511END3TL1

650V 11A TO-252, LOW-NOISE POWER

Rohm Semiconductor

2,106 2.94

RFQ

R6511END3TL1

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 400mOhm @ 3.8A, 10V 4V @ 320µA 32 nC @ 10 V ±20V 670 pF @ 25 V - 124W (Tc) 150°C (TJ) Surface Mount
R6006PND3FRATL

R6006PND3FRATL

600V 6A TO-252, AUTOMOTIVE POWER

Rohm Semiconductor

2,063 2.94

RFQ

R6006PND3FRATL

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 1.2Ohm @ 3A, 10V 4.5V @ 1mA 15 nC @ 10 V ±30V 460 pF @ 25 V - 87W (Tc) 150°C (TJ) Surface Mount
R8002CND3FRATL

R8002CND3FRATL

MOSFET N-CH 800V 2A TO252

Rohm Semiconductor

2,500 2.97

RFQ

R8002CND3FRATL

Datasheet

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 4.3Ohm @ 1A, 10V 5.5V @ 1mA 12.1 nC @ 10 V ±30V 240 pF @ 25 V - 69W (Tc) 150°C (TJ) Surface Mount
R6004PND3FRATL

R6004PND3FRATL

MOSFET N-CH 600V 4A TO252

Rohm Semiconductor

2,708 3.06

RFQ

R6004PND3FRATL

Datasheet

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 1.8Ohm @ 2A, 10V 4.5V @ 1mA 11 nC @ 10 V ±25V 280 pF @ 25 V - 65W (Tc) 150°C (TJ) Surface Mount
RSJ301N10TL

RSJ301N10TL

NCH 100V 30A POWER MOSFET : RSJ3

Rohm Semiconductor

3,898 3.05

RFQ

RSJ301N10TL

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 30A (Ta) 4V, 10V 46mOhm @ 15A, 10V 2.5V @ 1mA 60 nC @ 10 V ±20V 2100 pF @ 25 V - 50W (Ta) 150°C (TJ) Surface Mount
RS6P100BHTB1

RS6P100BHTB1

NCH 100V 100A, HSOP8, POWER MOSF

Rohm Semiconductor

2,807 3.37

RFQ

RS6P100BHTB1

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 5.9mOhm @ 90A, 10V 4V @ 1mA 45 nC @ 10 V ±20V 2880 pF @ 50 V - 104W (Tc) 150°C (TJ) Surface Mount
RS6R060BHTB1

RS6R060BHTB1

NCH 150V 60A, HSOP8, POWER MOSFE

Rohm Semiconductor

2,439 3.48

RFQ

RS6R060BHTB1

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 150 V 60A (Ta) 6V, 10V 21.8mOhm @ 60A, 10V 4V @ 1mA 46 nC @ 10 V ±20V 2750 pF @ 75 V - 104W (Tc) 150°C (TJ) Surface Mount
R8006KND3TL1

R8006KND3TL1

HIGH-SPEED SWITCHING NCH 800V 6A

Rohm Semiconductor

2,220 3.63

RFQ

R8006KND3TL1

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Ta) 10V 900mOhm @ 3A, 10V 4.5V @ 4mA 22 nC @ 10 V ±20V 650 pF @ 100 V - 83W (Tc) 150°C (TJ) Surface Mount
RS6L120BGTB1

RS6L120BGTB1

NCH 60V 150A, HSOP8, POWER MOSFE

Rohm Semiconductor

3,604 3.77

RFQ

RS6L120BGTB1

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Ta) 4.5V, 10V 2.7mOhm @ 90A, 10V 2.5V @ 1mA 51 nC @ 10 V ±20V 3520 pF @ 30 V - 104W (Tj) 150°C (TJ) Surface Mount
R8005ANJGTL

R8005ANJGTL

NCH 800V 5A POWER MOSFET : R8005

Rohm Semiconductor

2,871 4.31

RFQ

R8005ANJGTL

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 2.1Ohm @ 2.5A, 10V 5V @ 1mA 20 nC @ 10 V ±30V 500 pF @ 25 V - 120W (Tc) 150°C (TJ) Surface Mount
R8007AND3FRATL

R8007AND3FRATL

MOSFET N-CH 800V 7A TO252

Rohm Semiconductor

2,360 5.47

RFQ

R8007AND3FRATL

Datasheet

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 1.6Ohm @ 3.5A, 10V 5V @ 1mA 28 nC @ 10 V ±30V 850 pF @ 25 V - 140W (Tc) 150°C (TJ) Surface Mount
R6511ENXC7G

R6511ENXC7G

650V 11A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

3,465 3.45

RFQ

R6511ENXC7G

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Ta) 10V 400mOhm @ 3.8A, 10V 4V @ 320µA 32 nC @ 10 V ±20V 670 pF @ 25 V - 53W (Tc) 150°C (TJ) Through Hole
RJ1L12CGNTLL

RJ1L12CGNTLL

NCH 60V 120A POWER MOSFET: RJ1L1

Rohm Semiconductor

3,433 6.56

RFQ

RJ1L12CGNTLL

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Ta) 4.5V, 10V 3.4mOhm @ 50A, 10V 2.5V @ 200µA 139 nC @ 10 V ±20V 7100 pF @ 30 V - 166W (Ta) 150°C (TJ) Surface Mount
R6530KNX3C16

R6530KNX3C16

MOSFET N-CH 650V 30A TO220AB

Rohm Semiconductor

3,626 3.52

RFQ

R6530KNX3C16

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 140mOhm @ 14.5A, 10V 5V @ 960µA 56 nC @ 10 V ±20V 2350 pF @ 25 V - 307W (Tc) 150°C (TJ) Through Hole
RJ1L12BGNTLL

RJ1L12BGNTLL

NCH 60V 120A POWER MOSFET : RJ1L

Rohm Semiconductor

2,024 7.08

RFQ

RJ1L12BGNTLL

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Ta) 4.5V, 10V 2.9mOhm @ 40A, 10V 2.5V @ 500µA 175 nC @ 10 V ±20V 9000 pF @ 30 V - 192W (Ta) 150°C (TJ) Surface Mount
SCT2280KEC

SCT2280KEC

SICFET N-CH 1200V 14A TO247

Rohm Semiconductor

3,606 11.02

RFQ

SCT2280KEC

Datasheet

Tube - Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 14A (Tc) 18V 364mOhm @ 4A, 18V 4V @ 1.4mA 36 nC @ 18 V +22V, -6V 667 pF @ 800 V - 108W (Tc) 175°C (TJ) Through Hole
R6077VNZ4C13

R6077VNZ4C13

600V 77A TO-247, PRESTOMOS WITH

Rohm Semiconductor

2,124 14.74

RFQ

R6077VNZ4C13

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 77A (Tc) 10V, 15V 51mOhm @ 23A, 15V 6.5V @ 1.9mA 108 nC @ 10 V ±30V 5200 pF @ 100 V - 781W (Tc) 150°C (TJ) Through Hole
SCT2080KEC

SCT2080KEC

SICFET N-CH 1200V 40A TO247

Rohm Semiconductor

2,278 22.56

RFQ

SCT2080KEC

Datasheet

Tube - Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 40A (Tc) 18V 117mOhm @ 10A, 18V 4V @ 4.4mA 106 nC @ 18 V +22V, -6V 2080 pF @ 800 V - 262W (Tc) 175°C (TJ) Through Hole
SCT3017ALGC11

SCT3017ALGC11

650V, 118A, THD, TRENCH-STRUCTUR

Rohm Semiconductor

3,433 122.40

RFQ

SCT3017ALGC11

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 118A (Tc) 18V 22.1mOhm @ 47A, 18V 5.6V @ 23.5mA 172 nC @ 18 V +22V, -4V 2884 pF @ 500 V - 427W 175°C (TJ) Through Hole
BSM600C12P3G201

BSM600C12P3G201

SICFET N-CH 1200V 600A MODULE

Rohm Semiconductor

2,702 1440.00

RFQ

BSM600C12P3G201

Datasheet

Tray - Active N-Channel SiCFET (Silicon Carbide) 1200 V 600A (Tc) - - 5.6V @ 182mA - +22V, -4V 28000 pF @ 10 V - 2460W (Tc) 175°C (TJ) Chassis Mount
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